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Rate-equation modeling of spectrum and dynamic properties of quantum-dot lasers

Chen, H.-T. / Hsieh, W.-H. / Mao, M.-H. | IEEE | 2003

The influences of the material and structural parameters on the static and dynamic characteristics of quantum-dot lasers are analyzed using ...

Tailoring of quantum dot infrared photodetector performance with AlAs/GaAs superlattice barriers

Stiff-Roberts, A.D. / Chakrabarti, S. / Bhattacharya, P. et al. | IEEE | 2003

High responsivity, polarization-sensitive, 70-layer InAs/GaAs quantum dot infrared photodetector

Stiff-Roberts, A.D. / Chakrabarti, S. / Kennerly, S. et al. | IEEE | 2003

Formation and characteristics of wide band gap II-VI semiconductor quantum dots

Fan, X.W. / Shan, C.X. / Yang, Y. et al. | IEEE | 2003

CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition ...

InAs quantum dots on InP(100) grown by metalorganic vapor-phase epitaxy

Kawaguchi, K. / Ekawa, M. / Kuramata, A. et al. | IEEE | 2003

Fast quantum-dot saturable absorber for passive mode-locking of solid-state lasers

Rafailov, E.U. / White, S.J. / Lagatsky, A.A. et al. | IEEE | 2003

Microdisks with quantum dot active regions lasing near 1300 nm at room-temperature

Yang, T. / Cao, J. / Lee, P. et al. | IEEE | 2003

Lasing near 1300 nm in microdisks with InAs quantum dot active regions is reported for the first time. The microdisks were optically pumped ...

External feedback effects on a quantum dot laterally loss coupled distributed feedback laser

Su, H. / Malloy, K.J. / Lester, L.F. et al. | IEEE | 2003

The critical external feedback ratio for coherence collapse in a quantum dot laterally loss coupled distributed feedback (QD LLC DFB) laser ...

Quantum dot structures and their optical properties of a high-indium InGaN film

Shih-Wei Feng, / En-Chiang Lin, / Yung-Chen Cheng, et al. | IEEE | 2003

to the quantum dot-like cluster size reduction through spinodal decomposition at thermal annealing. ...

Spectral dependence of modal gain and linewidth enhancement factor in InAs quantum dot lasers

Ukhanov, A.A. / Stintz, A. / Eliseev, P.G. et al. | IEEE | 2003

Colloidal chemical synthesis and nonlinear optical properties of cadmium chalcogenide semiconductor nanocrystal quantum dots

Seo, J.T. / Pompey, C. / Yang, Q. et al. | IEEE | 2003

The nonlinear refraction and the nonlinear figure of merit of CdTe nanocrystal quantum dots in toluene were estimated to be /spl sim/-1/spl ...

The impact of strain on the spontaneous emission from self assembled quantum dot laser diodes

Tan, K.T. / Wonfor, A. / Penty, R.V. et al. | IEEE | 2003

The effect of strain in laser diodes with pyramidal quantum dots has been experimentally studied and theoretically modelled. Strongly ...

1.3 /spl mu/m ln(Ga)As/GaAs quantum-dot lasers and their dynamic properties

Mao, M.-H. / Wu, T.-Y. / Chang, F.-Y. et al. | IEEE | 2003

In(Ga)As/GaAs quantum-dot lasers with emission wavelength at 1295 nm at room temperature are fabricated. The highest relaxation oscillation ...

Spontaneous emission and optical gain due to quantum-well to quantum-dot photon-assisted tunneling

Chuang, S.L. / Littlewood, P. / Walter, G. et al. | IEEE | 2003

Modification of spontaneous emission rate in strained gan quantum dots by resonant surface plasmon interaction

Neogi, A. / Morkoc, H. | IEEE | 2003

Electron and exciton-phonon interaction in quantum dots and wires: the peculiarities of Raman spectrum

Tkach, M.V. / Zharkoy, V.P. / Voitsekhivska, O.M. et al. | IEEE | 2003

symmetry of quantum dot and cylindrical quantum wire in the Raman spectra one cannot see the interface phonon repeatings. There are only the ...

Auger recombination in 1.3-/spl mu/m InAs/GaInAs quantum dot lasers studied using high pressure

Marko, I.P. / Andreev, A.D. / Adams, A.R. et al. | IEEE | 2003

The Auger recombination in 1.3/spl mu/m InAs/GalnAs quantum dot lasers were investigated. To analyse the experimental results, theoretical ...

Formation of InGaAs/GaAs quantum-well dots by using self-assembled InAs quantum dots as stressors

Xiaodong Mu, / Yujie J. Ding, / Zhiming Wang, et al. | IEEE | 2003

Strain-induced material intermixing in multiple-stacked Ge/Si quantum dots grown by chemical vapor deposition

Wen-Hao Chang, / Wen-Yen Cheng, / An-Tai Chou, et al. | IEEE | 2003

Photoluminescence investigations on stacked Ge/Si quantum dots with different thicknesses of Si spacer layer are presented. According to ...

Time-resolved optical nonlinearity measurement by a two color pump-probe ellipsometry in InAs quantum dot waveguide

Kanamoto, K. / Nakamura, H. / Nakamura, Y. et al. | IEEE | 2003

We have developed a two color pump-probe ellipsometry for the measurement of the optical nonlinear phase shift in a waveguide with quantum ...