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Ledentsov, N.N.   Elektronische Ressource   Englisch   Auswahl aufheben

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    5 Gb/s elevated temperature data transmission using quantum dot lasers

    Tan, K.T. / Marinelli, C. / Thompson, M.G. et al. | IEEE | 2004
    We report the first error free 5 Gb/s transmission over 4 km single-mode fibre and 500 m multi-mode fibre using InGaAs/GaAs quantum dot ...

    20 Gb/s 85 °C Error Free Operation of VCSEL based on Submonolayer Deposition of Quantum Dots

    Hopfer, F. / Mutig, A. / Fiol, G. et al. | IEEE | 2006

    35 GHz passive mode-locking of InGaAs/GaAs quantum dot lasers at 1.3 /spl mu/m with Fourier-limited pulses

    Kuntz, M. / Fiol, G. / Laemmlin, M. et al. | IEEE | 2004
    We report 35 GHz passive mode-locking and 20 GHz hybrid mode-locking of quantum dot (QD) lasers at 13 /spl mu/m. Our investigations show ...

    An analog of free carrier plasma component of carrier induced refractive index in quantum dot lasers

    Uskov, A.V. / O'Reilly, E.P. / McPeake, D. et al. | IEEE | 2004
    The carrier-induced refractive index in quantum dot (QD) structures due to optical transitions from QD levels to continuum states is ...

    GaAs-based bipolar cascade InAs/InGaAs quantum dot VCSELs emitting near 1300 nm

    Lott, J.A. / Stintz, A. / Kovsh, A.R. et al. | IEEE | 2005
    This study presents the design and performance of self-assembled quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) in a ...

    GaAs-Based InAs/InGaAs Quantum Dot Vertical Cavity and Vertical External Cavity Surface Emitting Lasers Emitting Near 1300 nm

    Lott, J.A. / Kovsh, A.R. / Ledentsov, N.N. et al. | IEEE | 2005
    quantum dot active regions grown on GaAs substrates that emit over 1 mW continuous wave peak power at room temperature are demonstrated. ...

    High performance long-wavelength QD diode lasers on GaAs substrates

    Maleev, N.A. / Kovsh, A.R. / Zhukov, A.E. et al. | IEEE | 2002
    Long-wavelength GaAs-based quantum dot laser diodes with external differential efficiency of 84...88% combined with low internal loss and ...

    High--power ultrashort pulses output from a modelocked two-section quantum-dot laser

    Rafailov, E.U. / Cataluna, M.-A. / Sibbett, W. et al. | IEEE | 2004

    Mode-locking at 9.7 GHz repetition rate with 1.7 ps pulse duration in two-section QD lasers

    Gubenko, A.E. / Gadjiev, L.M. / Il'inskaya, N.D. et al. | IEEE | 2004
    (/spl lambda/=1.28 /spl mu/m) quantum-dot laser. Pulse shortening with the absorber section bias increase is observed. ...

    Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 /spl mu/m vertical cavity surface emitting lasers

    Lott, J.A. / Ledentsov, N.N. / Kovsh, A.R. et al. | IEEE | 2003
    In this paper we report on the design and performance of GaAs-based, quantum dot vertical cavity surface emitting lasers (VCSELs) that emit ...

    Overcoming gain saturation in InAs/GaAs quantum dot lasers

    Schmidt, O.G. / Kirstaedter, N. / Mao, M.-H. et al. | IEEE | 1996
    By stacking multiple layers of InAs-GaAs quantum dots gain saturation in zero-dimensional laser structures is overcome. The effect of ...

    Prospects for ultrafast optical switching based on quantum dot semiconductor optical amplifiers in nonlinear interferometers

    Uskov, A.V. / O'Reilly, E.P. / Manning, R.J. et al. | IEEE | 2004
    It is shown that interferometers containing quantum-dot semiconductor optical amplifiers can be effective for ultrafast cross-phase ...

    Quantum dot photonics: edge emitter, amplifier and VCSEL

    Hopfer, F. / Kuntz, M. / Lammlin, M. et al. | IEEE | 2005

    Room Temperature Multi-stacked Quantum Dot Lasers Basic Components Of Threshold Current Density

    Zaitsev, S.V. / Georgievski, A.M. / Gordeev, N.Yu. et al. | IEEE | 1997

    Room temperature quantum dot lasers: From basic experiments to first device oriented structures

    Zaitsev, S.V. / Gordeev, N.Yu. / Ustinov, V.M. et al. | IEEE | 1996
    Summary form only given. Due to increasing of the quantum dot (QD) layer number up to 10 the threshold current density was reduced at RT ...

    Stable modelocked operation from a quantum-dot laser in a broad temperature range

    Rafailov, E.U. / Cataluna, M.A. / Sibbett, W. et al. | IEEE | 2005
    We demonstrate stable modelocking operation in a two-section quantum-dot laser at temperatures ranging from 20/spl deg/C to 80/spl deg/C ...

    Vertical cavity surface emitting lasers based on vertically coupled quantum dots

    Ledentsov, N.N. / Ustinov, V.M. / Lott, J.A. et al. | IEEE | 1997

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