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High performance 1300-nm dilute-nitride quantum well lasers by MOCVD

Tansu, N. / Mawst, L.J. | IEEE | 2002

Characteristics of dilute-nitride quantum well lasers

Mawst, L.J. / Yeh, J.-Y. / Tansu, N. | IEEE | 2005

Carrier transport and injection efficiency of InGaAsN quantum-well lasers

Jeng-Ya Yeh, / Mawst, L.J. / Tansu, N. | IEEE | 2004

Carrier confinement in 1300-nm InGaAsN quantum-well lasers

Tansu, N. / Yeh, J.-Y. / Mawst, L.J. | IEEE | 2003

Temperature sensitivity of 1360 nm InGaAsN quantum well lasers

Jeng-Ya Yeh, / Tansu, N. / Mawst, L.J. | IEEE | 2003

Optical gain analysis of strain-compensated InGaN-AlGaN quantum well active regions for lasers emitting at 420-500 nm

Zhao, H. / Arif, R.A. / Ee, Y.-K. et al. | British Library Online Contents | 2008

Dilute-nitride mid-infrared type-II "W" quantum-well lasers on InP substrates

Vurgaftman, I. / Meyer, J.R. / Tansu, N. et al. | IEEE | 2004

GaAsSb-(In)GaAsN type-II quantum-well lasers on GaAs substrate

Tansu, N. / Mawst, L.J. / Vurgaftman, I. et al. | IEEE | 2003

Linewidth-enhancement factors of InGaAs and InGaAsN single-quantum-well diode lasers

Shterengas, L. / Jeng-Ya Yeh, / Mawst, L.J. et al. | IEEE | 2004

Large spot-size narrow waveguide VCSEL

Delai Zhou, / Tae-Woo Lee, / Tansu, N. et al. | IEEE | 2001

The effect of temperature on the efficiency of InGaAs and InGaAsN quantum well laser structures

Palmer, D.J. / Smowton, P.M. / Blood, P. et al. | IEEE | 2005

The effect of nitrogen in InGaAsN quantum well lasers

Palmer, D.J. / Smowton, P.M. / Blood, P. et al. | IEEE | 2004

Effect of nitrogen content and temperature on the f/sub 3 dB/ of 1.3 /spl mu/m dilute-nitride SQW lasers

Anton, O. / Menoni, C.S. / Yeh, J.-Y. et al. | IEEE | 2005

The 3 dB bandwidth of strain-compensated dilute-nitride quantum-well lasers

Anton, O. / Menoni, C.S. / Jeng-Ya Yeh, et al. | IEEE | 2004

Effect of nitrogen concentration on carrier lifetime in GaAs based long wavelength (/spl lambda/ = 1.2-1.3 /spl mu/m) lasers

Anton, O. / Patel, D. / Menoni, C.S. et al. | IEEE | 2004

Lasing characteristics and temperature analysis of strain compensated InGaAs(N)-GaAsP-GaAs (/spl lambda/>1.17 /spl mu/m) quantum well lasers

Tansu, N. / Ying-Lan Chang, / Takeuchi, T. et al. | IEEE | 2001

Investigation of the carrier dynamics of strain compensated InGaAsN quantum wells

Lifang Xu, / Patel, D. / Vaschenko, G. et al. | IEEE | 2005