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    Strong-coupling and nonlinear emission from a quantum-dot photonic-crystal-slab nanocavity

    Hendrickson, J.R. / Richards, B.C. / Sweet, J. et al. | IEEE | 2005
    An InAs quantum dot in a photonic crystal nanocavity exhibits vacuum Rabi splitting (strong coupling); a clear anti-crossing is seen ...

    Stable modelocked operation from a quantum-dot laser in a broad temperature range

    Rafailov, E.U. / Cataluna, M.A. / Sibbett, W. et al. | IEEE | 2005
    We demonstrate stable modelocking operation in a two-section quantum-dot laser at temperatures ranging from 20/spl deg/C to 80/spl deg/C ...

    Characteristics of high performance 1.3 /spl mu/m tunnel injection quantum dot lasers

    Mi, Z. / Fathpour, S. / Bhattacharya, P. | IEEE | 2005
    1.3 /spl mu/m tunnel injection InAs quantum dot lasers are reported for the first time. They exhibit T/sub 0/ = /spl infin/ (5/spl deg/C ...

    Enhanced phonon-assisted absorption of InGaAs quantum dots confined in a planar microcavity

    Wang, X.Y. / Shih, C.K. / Zhang, J.Y. et al. | IEEE | 2005

    Orientational imaging and tracking of single colloidal CdSe quantum dots by defocused microscopy

    Brokmann, X. / Ehrensperger, M.V. / Hermier, J.P. et al. | IEEE | 2005

    Patterned quantum dot lasers fabricated using electron beam lithography and selective area epitaxial growth

    Elarde, V.C. / Coleman, J.J. / Bryce, A.C. | IEEE | 2005
    This paper demonstrates a fabrication process which allows the location and geometry of quantum dots to be explicitly defined using ...

    Modelling quantum-dot in quasi-3D photonic crystal defect microcavity for single-photon sources

    Ho, Y.-L.D. / Cao, T. / Ivanov, P.S. et al. | IEEE | 2005
    We model wavelength scale III-V photonic crystal defect microcavities containing a single quantum-dot using 3-D FDTD. These microcavities ...

    Investigation of transition dynamics in a quantum-dot laser optically pumped by femtosecond pulses

    Rafailov, E.U. / McRobbie, A.D. / Cataluna, M.A. et al. | IEEE | 2005
    We investigated the behaviour of a quantum-dot edge-emitting laser, optically pumped by femtosecond pulses. We demonstrated that pulses ...

    Homogeneous broadening in quantum dots due to Auger scattering with wetting layer carriers

    Nilsson, H.H. / Zhang, J.-Z. / Galbraith, I. | IEEE | 2005
    The homogeneous broadening in quantum dots due to various Auger scattering processes is calculated, accounting for exchange and screening ...

    Measurement of the Linewidth Enhancement Factor of Quantum Dot Lasers Using External Light Injection

    Chu, Y. / Penty, R.V. / White, I.H. | IEEE | 2005

    Size dependence of band gap variation and electron-phonon coupling in ZnO Quantum Dots

    Wen-Feng Hsieh, / Hsin-Ming Cheng, / Kuo-Feng Lin, et al. | IEEE | 2005
    Photoluminescence and resonant Raman scattering (RRS) were investigated in various sizes of ZnO quantum dots. The size dependent shift of ...

    InGaAs quantum dots-in-a-well photodetectors grown by metal organic chemical vapor deposition

    Jolley, G. / Tan, H.H. / Fu, L. et al. | IEEE | 2005
    The characteristics of metal organic chemical vapor deposition (MOCVD) grown InGaAs quantum dot infrared photodetectors based on the ...

    Tunable propagation delay of femtosecond pulses in a quantum-dot optical amplifier at room temperature

    van der Poel, M. / Mork, J. / Hvam, J.M. | IEEE | 2005
    Optically induced dispersion over a large bandwidth of 2.6 THz is used to slow or speed up a 150 fs pulse in a quantum-dot optical ...

    Integration of an InGaAs quantum-dot laser with a passive waveguide using selective-area MOCVD

    Mokkapati, S. / Tan, H.H. / Jagadish, C. | IEEE | 2005
    We present the design and operation of an InGaAs quantum-dot laser integrated with a passive waveguide. Selective-area MOCVD is used to ...

    1.3 /spl mu/m high density quantum dot laser with short cavity and cleaved facet

    Amano, T. / Sugaya, T. / Komori, K. | IEEE | 2005
    This paper reports the characteristics of a high density quantum dot (QD) laser. This work demonstrates beyond 1.3-/spl mu/m wavelength ...

    Internal loss as a limiting factor for the maximum power of a quantum dot laser

    Asryan, L.V. | IEEE | 2005
    The free-carrier-density dependent internal loss is shown to strongly limit the output power of a quantum dot laser. The maximum optical ...

    Electronic shell structure in single InAs/InGaAs quantum dots emitting at 1.3 /spl mu/m

    Cade, N.I. / Gotoh, H. / Kamada, H. et al. | IEEE | 2005
    Photoluminescence spectra from single In(Ga)As:Bi quantum dots in a quantum well show low-temperature emission around 1300 nm. We observe ...

    High-quality-factor AlGaAs optical microcavities for atomic Cs and semiconductor quantum dot cavity QED experiments

    Srinivasan, K. / Barclay, P.E. / Painter, O. et al. | IEEE | 2005
    High-quality-factor (Q/spl sim/10/sup 4/-10/sup 5/) AlGaAs microdisks for atomic and semiconductor quantum dot cavity QED experiments are ...

    Single photon emission from gallium nitride quantum dots at a record-short wavelength of 357 nm

    Kako, S. / Hoshino, K. / Ishida, S. et al. | IEEE | 2005
    We present measurements of the second-order coherence function on emission from single GaN quantum dots. A large degree of photon ...

    Modified spontaneous emission and qubit entanglement from two coupled quantum dots in a photonic crystal nanocavity

    Hughes, S. | IEEE | 2005
    Spontaneous emission dynamics of two dipole-coupled quantum dots in a photonic crystal nanocavity are theoretically investigated. Strong ...

    Ultra-thin quantum wells and fractional monolayer quantum dots of II-VI semiconductors for optoelectronic applications

    Hernandez-Calderon, I. / Alfaro-Martinez, A. / Garcia-Rocha, M. | IEEE | 2005
    degradation of their structural quality during the ALE growth. Fractional monolayer quantum dots (FMQDs) produced by the deposition of /spl sim/0.5 ML ...

    The influence of p-doping on the temperature sensitivity of 1.3 /spl mu/m quantum dot lasers

    Masse, N.F. / Marko, I.P. / Sweeney, S.J. et al. | IEEE | 2005
    We find that non-radiative recombination plays an important role in p-doped quantum-dot lasers. Along with carrier thermalisation effects ...

    Transient spectral hole burning spectroscopy of exciton spin flip processes in In(Ga)As quantum dots

    Muller, T. / Strasser, G. / Unterrainer, K. | IEEE | 2005
    Transient spectral hole burning measurements are performed on InAs/GaAs self-assembled quantum dots. In the case of cross-polarized pump ...

    Modeling and fabrication of sub-diffraction nanophotonic waveguides constructed via DNA-directed self-assembled quantum dots

    Wang, C.-J. / Lin, L.Y. / Parviz, B.A. | IEEE | 2005
    We present the design, model, and preliminary fabrication results for a sub-diffraction nanophotonic waveguide composed of quantum dots ...

    Numerical aperture increasing lens microscopy for high resolution and high collection efficiency spectroscopy of single quantum dots

    Vamivakas, A.N. / Liu, Z. / Ippolito, S.B. et al. | IEEE | 2005
    The numerical aperture increasing lens (NAIL) technique is applied to imaging and spectroscopy of single InGaAs quantum dots (QDs). Using ...

    Rapid thermal annealing study of InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

    Fu, L. / Kuffner, P. / McKerracher, I. et al. | IEEE | 2005
    In this work, the effects of postgrowth rapid thermal annealing (RTA) on tuning the operating wavelength of self-assembled quantum dots ...

    Temperature-Insensitive 10 Gb/s Direct Modulation Lasers with InAs Self-Assembled Quantum Dots at 1.3 μm

    Sugawara, M. / Otsubo, K. / Yamamoto, T. et al. | IEEE | 2005
    Based on our design on the maximum bandwidth for high-speed modulation and p-type doping into quantum dots for high temperature stability ...

    Large enhancement of fluorescence from CdSe/ZnS quantum dots induced by resonant coupling to spatially controlled surface plasmons

    Shi, S. / Atay, T. / Urabe, H. et al. | IEEE | 2005
    Nanoengineered fluorescent response is reported in semiconductor core-shell (CdSe/ZnS) quantum dots in proximity to the surface plasmon ...

    GaAs-Based InAs/InGaAs Quantum Dot Vertical Cavity and Vertical External Cavity Surface Emitting Lasers Emitting Near 1300 nm

    Lott, J.A. / Kovsh, A.R. / Ledentsov, N.N. et al. | IEEE | 2005
    quantum dot active regions grown on GaAs substrates that emit over 1 mW continuous wave peak power at room temperature are demonstrated. ...

    Nanoscale selective area epitaxy: towards lithographically defined quantum dots at 1.5 /spl mu/m using direct lithographic patterning

    Swint, R.B. / Juodawlkis, P.W. / Oakley, D.C. et al. | IEEE | 2005

    A master oscillator power amplifier system based on external cavity mode-locking of a quantum-dot two-section diode laser

    Myoung-Taek Choi, / Wangkuen Lee, / Ji-Myung Kim, et al. | IEEE | 2005

    Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 /spl mu/m with side-mode suppression ratio > 30 dB

    Chang, Y.H. / Lin, G.R. / Kuo, H.C. et al. | IEEE | 2005
    We present monolithically quantum-dot vertical-cavity surface-emitting laser (QD VCSELs) operating in the 1.3 /spl mu/m optical ...

    Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 /spl mu/m quantum dot lasers

    Marko, I.P. / Masse, N. / Sweeney, S.J. et al. | IEEE | 2005

    size and density control of InAs quantum dots by selective MOVPE growth employing stripe mask array and composition-varied GaInAs layer

    Yamauchi, Y. / Kawakita, Y. / Okamoto, S. et al. | IEEE | 2005
    Selective MOVPE growth of self-assembled InAs quantum dots (QDs) using a SiO/sub 2/ narrow stripe mask array and composition-varied GaInAs ...

    Experimental observation of the magnitude and sign of the third order optical nonlinearity in CdS quantum dots in a dendrimer matrix

    Etienne, M. / Walser, A.D. / Dorsinville, R. et al. | IEEE | 2005
    We have investigated the nonlinear optical response of CdS quantum dots in a poly(propyleneimine) dendrimer matrix having diaminobutane ...

    The impact of AlGaAs cladding layers grown at low temperature on the performance of MOCVD based InAs/GaAs quantum dot laser diodes

    Sears, K. / Buda, M. / Tan, H.H. et al. | IEEE | 2005

    Effects of strain and barrier height of thin interlayer on InAs quantum dots grown on GaInAsP/InP (100) by metalorganic chemical vapor deposition

    Barik, S. / Tan, H.H. / Barik M, et al. | IEEE | 2005
    experimentally observed blue-shift in the photoluminescence of InAs quantum dots grown on GaInAsP/InP (100). ...

    Static and dynamic measurements of the Henry factor of 5-quantum dot layer single mode lasers emitting at 1.3 /spl mu/m on GaAs

    Martinez, A. / Provost J-G, / Lemaitre, A. et al. | IEEE | 2005
    The "material" and "device" linewidth enhancement factor of 5 quantum-dot layer single mode lasers emitting at 1.3 /spl mu/m are ...

    Why is the room temperature optical differential gain of zero, one and two dimensional semiconductor lasers nearly identical

    Dery, H. / Eisenstein, G. | IEEE | 2005
    We model the differential gain in nano-structure semiconductor lasers. Quantum dots, wires and wells are compared and are found to have ...

    Monolithic integration of Sb-based photopumped lasers on Si

    Balakrishnan, G. / Huang, S. / Khoshakhlagh, A. et al. | IEEE | 2005
    device is grown on Si(100) using an AlSb quantum dot nucleation layer. ...

    Controlled spatial and spectral coupling of single InAs excitons to photonic crystal nanocavity modes

    Hennessy, K. / Badolato, A. / Petroff, P.M. et al. | IEEE | 2005
    We demonstrate a method to deterministically couple single InAs quantum dots to photonic crystal nanocavities based on high resolution ...

    Nanophotonic memory-based computation using optical near-field interactions

    Naruse, Makoto / Kawazoe, Tadashi / Sangu, Suguru et al. | IEEE | 2005
    -field interactions between quantum dots, which will allow high-density integration beyond the diffraction-limit of light. ...

    Physics and simulation of semiconductor lasers

    Koch, S.W. | IEEE | 2005
    semiconductor heterostructures are discussed and nonequilibrium simulations of quantum-well and quantum-dot laser systems are presented. ...

    Probing ultrafast carrier dynamics in semiconductor nanostructures with terahertz pulses

    Cooke, D.G. / MacDonald, A.N. / Hryciw, A. et al. | IEEE | 2005
    InGaAs quantum dot chains and wires, GaAs nanowires, and Si nanoclusters embedded in glass. ...

    Towards wafer-scale integration of high-repetition-rate passively mode-locked surface-emitting semiconductor lasers

    Maas, D.J.H.C. / Lorenser, D. / Unold, H.J. et al. | IEEE | 2005
    The successful fabrication of quantum-dot-based semiconductor saturable absorber mirrors has been demonstrated in a laser running at record ...

    A single-photon resonant-cavity LED

    Bennett, A.J. / Unitt, D.C. / See, P. et al. | IEEE | 2005
    We describe an electrically driven single photon source consisting of a single InAs/GaAs quantum dot within a planar microcavity. Single ...

    Controlling spontaneous emission rate in solid state for quantum information science

    Englund, D. / Fattal, D. / Waks, E. et al. | IEEE | 2005
    We enhance and suppress the excitonic lifetime of an InAs quantum dot (QD) by modifying its alignment with a resonance cavity in a photonic ...

    Investigation of the carrier dynamics of strain compensated InGaAsN quantum wells

    Lifang Xu, / Patel, D. / Vaschenko, G. et al. | IEEE | 2005
    A quantum dot-like behavior in the dynamics of carrier recombination is observed in InGaAsN quantum wells at temperatures at and below /spl ...

    Optical interconnects using optical far- and near-field interactions for high-density data broadcasting

    Naruse, M. / Kubota, F. / Kawazoe, T. et al. | IEEE | 2005
    interactions between quantum dots, which are forbidden for far-field light, allowing sub-wavelength device functions and far-field excitation for ...

    Towards wafer-scale integration of high-repetition-rate passively mode-locked surface-emitting semiconductor lasers

    Unold, H.J. / Lorenser, D. / Maas, D.J.H.C. et al. | IEEE | 2005
    We demonstrate the fabrication of a key element for monolithic integration of mode-locked VECSELs, namely a quantum-dot-based SESAM with ...

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