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Bhattacharya, P.   Elektrotechnik   Elektronische Ressource   Englisch   Auswahl aufheben

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    Dynamic characteristics of quantum dot lasers

    Bhattacharya, P. | IEEE | 2004
    This paper describes special techniques, such as modulation doping and tunnel injection, that are required to enhance quantum dot (QD ...

    Electrically injected photonic crystal edge emitting quantum dot light source

    Topolancik, J. / Pradhan, S. / Yu, P.-C. et al. | IEEE | 2003
    presents a novel electrically injected 2D PC-based quantum dot edge emitting light source with coupled PC waveguide that avoids carrier ...

    Tailoring of quantum dot infrared photodetector performance with AlAs/GaAs superlattice barriers

    Stiff-Roberts, A.D. / Chakrabarti, S. / Bhattacharya, P. et al. | IEEE | 2003

    Modulation characteristics of In/sub 0.4/Ga/sub 0.6/As/GaAs quantum dot gain-coupled distributed feedback lasers

    Fathpour, S. / Bhattacharya, P. / Pradhan, S. et al. | IEEE | 2003
    This paper presents the high-speed modulation characteristics of In/sub 0.4/Ga/sub 0.60/As/GaAs self-organized quantum dot gain-coupled DFB ...

    Spin polarized quantum dot light emitters

    Bhattacharya, P. / Ghosh, S. | IEEE | 2002
    Summary form only given. In this paper, we describe the growth of (In,Mn)As self-organized quantum dots, or "diluted magnetic quantum dots ...

    Modulation characteristics of high-speed tunnel injection In/sub 0.4/Ga/sub 0.6/As quantum dot lasers

    Pradhan, S. / Ghosh, S. / Bhattacharya, P. | IEEE | 2002
    InGaAs/GaAs quantum dot lasers in which electrons are injected to the lasing ground state of the dots by tunneling. We report here the room ...

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