Effects of 0.28-2.80 MeV proton irradiation on GaInP/GaAs/Ge triple-junction solar cells for space use
Effects of 0.28-2.80 MeV proton irradiation on GaInP/GaAs/Ge triple-junction solar cells for space use
- Neue Suche nach: Wang, Rong
- Neue Suche nach: Liu, Yunhong
- Neue Suche nach: Sun, Xufang
- Neue Suche nach: Wang, Rong
- Neue Suche nach: Liu, Yunhong
- Neue Suche nach: Sun, Xufang
GaInP/GaAs/Ge triple-junction solar cells were irradiated with 0.28, 0.62 and 2.80 MeV protons with fluences ranging from 1 x 10E10 cm(exp-2) to 1 x 10E13 cm(exp-2). Their performance degradation is analyzed using current-voltage characteristics and spectral response measurements. The degradation rates of the short circuit current, open circuit voltage, and maximum power output increase with fluence, but decrease with increasing proton energy. It was also observed that the spectral response of the GaAs middle cell degrades more significantly than that of the GaInP top cell.
Dokumentinformationen
Effects of 0.28-2.80 MeV proton irradiation on GaInP/GaAs/Ge triple-junction solar cells for space use
Effekte von 0,28-2,80 MEV Protonenstrahlung auf GaInP/GaAs/Ge-Dreifachübergangs-Solarzellen für Raumfahrtanwendungen
2008
5 Seiten, 10 Quellen
Aufsatz (Zeitschrift)
Englisch
Ähnliche Titel
Advanced GaInP/Ga(In)As/Ge Triple-Junction Space Solar Cells
| British Library Conference Proceedings | 2002
Analysis of perimeter recombination in the subcells of GaInP/GaAs/Ge triple‐junction solar cells
| Online Contents | 2015