In this paper, requirements of power devices for automobile applications are discussed , especially hybrid vehicles, and the development of GaN power devices at Toyota. AlGaN/ GaN HEMTs were fabricated and their characteristics were measured . The breakdown voltage was over 600 V. The drain current with a gate width of 31mm was over 8A. Observation by a thermograph image of the device under high current operation showed the AlGaN/GaN HEMT operated at more than 300 deg C. All the results of GaN are really promising to realize high performance and small size inverters for future automobiles.
Wide-bandgap semiconductor devices for automobile applications
Leistungstransistor auf GaN-Basis für die Anwendung im Hybridfahrzeug
2006
4 Seiten, 8 Bilder, 1 Tabelle, 9 Quellen
Aufsatz (Konferenz)
Englisch
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