Thin Al2O3 passivated boron emitter of n‐type bifacial c‐Si solar cells with industrial process

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Thin Al2O3 passivated boron emitter of n‐type bifacial c‐Si solar cells with industrial process

Lu, Guilin

We have presented thin Al 2 O 3 (~4 nm) with SiN x :H capped (~75 nm) films to effectively passivate the boron‐doped p + emitter surfaces of the n‐type bifacial c‐Si solar cells with BBr 3 diffusion emitter and phosphorus ion‐implanted back surface field. The thin Al 2 O 3 capped with SiN x :H structure not only possesses the excellent field effect and chemical passivation, but also establishes a simple cell structure fully compatible with the existing production lines and processes for the low‐cost n‐type bifacial c‐Si solar cell industrialization. We have successfully achieved the large area (238.95 cm 2 ) high efficiency of 20.89% (front) and 18.45% (rear) n‐type bifacial c‐Si solar cells by optimizing the peak sintering temperature and fine finger double printing technology. We have further shown that the conversion efficiency of the n‐type bifacial c‐Si solar cells can be improved to be over 21.3% by taking a reasonable high emitter sheet resistance. Copyright © 2017 John Wiley & Sons, Ltd. We have successfully achieved the large area (238.95 cm 2 ) high efficiency of 20.89% (front) and 18.45% (rear) n‐type bifacial c‐Si solar cells using BBr 3 diffusion emitter and P ion‐implanted back surface field in conjunction with ultrathin Al 2 O 3 (4 nm) passivated p + emitter and fine finger double printing technology. The present simplified cell structure has great advantages in the low‐cost n‐type bifacial c‐Si solar cell industrialization, not only effectively passivating the p + emitter surfaces, but also fully compatible with the existing production lines and processes.