CuOx/a‐Si:H heterojunction thin‐film solar cell with an n‐type µc‐Si:H depletion‐assisting layer

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CuOx/a‐Si:H heterojunction thin‐film solar cell with an n‐type µc‐Si:H depletion‐assisting layer

Lee, Seong Hyun

We showed that thin n ‐type CuO x films can be deposited by radio‐frequency magnetron reactive sputtering and demonstrated the fabrication of n ‐CuO x /intrinsic hydrogenated amorphous silicon ( i ‐a‐Si:H) heterojunction solar cells (HSCs) for the first time. A highly n ‐doped hydrogenated microcrystalline Si ( n ‐µc‐Si:H) layer was introduced as a depletion‐assisting layer to further improve the performance of n ‐CuO x / i ‐a‐Si:H HSCs. An analysis of the external quantum efficiency and energy‐band diagram showed that the thin depletion‐assisting layer helped establish sufficient depletion and increased the built‐in potential in the n ‐CuO x layer. The fabricated HSC exhibited a high open‐circuit voltage of 0.715 V and an efficiency of 4.79%. Copyright © 2015 John Wiley & Sons, Ltd. The development of CuOx thin films with n‐type conduction properties allows us to successfully fabricate n‐CuOx/intrinsic hydrogenated amorphous silicon (i‐a‐Si:H) heterojunction solar cells (HSCs) for the first time. A highly n‐doped hydrogenated microcrystalline Si (n‐µc‐Si:H) layer was employed as a depletion‐assisting layer to further improve the performance of n‐CuOx/i‐a‐Si:H HSCs. This new application of the CuOx thin film could lead to further progress in various heterojunction solar cells and realization of colours for BIPV windows.