Circuit measures total dose of ionizing radiation in terms of shift in threshold gate voltage of doped-channel metal oxide/semiconductor field-effect transistor (p-MOSFET). Drain current set at temperature-independent point to increase accuracy in determination of radiation dose.
Advanced p-MOSFET Ionizing-Radiation Dosimeter
NASA Tech Briefs ; 18 , 5
1994-05-01
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Englisch
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