In this work, Ga-doped spin-on glass (SOG) film and electron beam evaporated titanium dioxide (TiO/sub 2/) film were deposited onto a In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot (QD) structure in order to suppress the interdiffusion. It is demonstrated that Ga-doped SOG was only able to restrict the occurrence of impurity free vacancy disordering which is promoted by normal SiO/sub 2 /film, however the TiO/sub 2/ film suppressed the thermal intermixing due to the thermal stress effect and possibly metallurgical reactions between GaAs and TiO/sub 2/.
Suppression of interdiffusion in In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dots
2002-01-01
232016 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Suppression of Interdiffusion in In~0~.~5Ga~0~.~5As/GaAs Quantum Dots
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