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    Suppression of interdiffusion in In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dots

    Suppression of interdiffusion in In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dots


    In this work, Ga-doped spin-on glass (SOG) film and electron beam evaporated titanium dioxide (TiO/sub 2/) film were deposited onto a In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dot (QD) structure in order to suppress the interdiffusion. It is demonstrated that Ga-doped SOG was only able to restrict the occurrence of impurity free vacancy disordering which is promoted by normal SiO/sub 2 /film, however the TiO/sub 2/ film suppressed the thermal intermixing due to the thermal stress effect and possibly metallurgical reactions between GaAs and TiO/sub 2/.

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    Titel :

    Suppression of interdiffusion in In/sub 0.5/Ga/sub 0.5/As/GaAs quantum dots

    Beteiligte:
    Fu, L. (Autor:in) / Lever, P. (Autor:in) / Tan, H.H. (Autor:in) / Jagadish, C. (Autor:in) / Reece, P. (Autor:in) / Gal, M. (Autor:in)
    Erschienen in:

    2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) ; 503-506

    Erscheinungsdatum :

    2002-01-01

    Format / Umfang :

    232016 byte

    ISBN :

    0-7803-7571-8

    ISSN :

    1097-2137

    DOI :

    https://doi.org/10.1109/COMMAD.2002.1237300

    Medientyp :

    Aufsatz (Konferenz)

    Format :

    Elektronische Ressource

    Sprache :

    Englisch

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