We present in this paper several different photodetector structures implemented with a conventional CMOS fabrication process that can be incorporated into optical data links and information processing systems. We investigate several detector structures using the 2-D materials simulation package MEDICI. The detector structure is evaluated by fabrication using an AMI 1.5 /spl mu/m CMOS process available through the MOSIS foundry service. When geometric and other structural differences are accounted for, the results indicate that the simulation adequately predicts photodetector operation under normal operating conditions.
Implementation of CMOS photodetectors in optoelectronic circuits
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; 2 ; 683-684 vol.2
2002-01-01
143875 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
ThG4 Implementation of CMOS Photodetectors in Optoelectronic Circuits
British Library Conference Proceedings | 2002
|Comparison of Sl/CMOS and GaAs MESFET Technologies for Analog Optoelectronic Circuits
British Library Conference Proceedings | 1994
|Optoelectronic integrated circuits promise simplicity
British Library Online Contents | 1997
|British Library Conference Proceedings | 1997
|