High speed and low chirp light sources are among the most essential components in long distance multigigabit optical communication systems. InGaAsP-InGaAsP electroabsorption (EA) modulator integrated DFB-LDs (EMILD) have attracted special interest because of their small size, low operating voltage and low chirp. In this paper, the optical and electrical characteristics of an InGaAs-InGaAsP MQW EMILD were studied.
InGaAs/InGaAsP MQW electroabsorption modulator integrated DFB-LD structure grown by selective area epitaxy
1999-01-01
121634 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
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