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    Quantum wells intermixing in InGaAsP/InGaAsP laser structure for photonic integrated circuits

    Quantum wells intermixing in InGaAsP/InGaAsP laser structure for photonic integrated circuits


    We report the selective area bandgap tuning of multiple quantum well structures by an impurity free vacancy induced quantum well intermixing technique. A 3 dB waveguide directional coupler was fabricated in the disordered section of an intermixed quantum well sample as a demonstration of photonic device applications.

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    Titel :

    Quantum wells intermixing in InGaAsP/InGaAsP laser structure for photonic integrated circuits

    Beteiligte:
    Nah, J. (Autor:in) / LiKamWa, P. (Autor:in)
    Erschienen in:

    2005 Quantum Electronics and Laser Science Conference ; 2 ; 1257-1259 Vol. 2

    Erscheinungsdatum :

    2005-01-01

    Format / Umfang :

    745721 byte

    ISBN :

    1-55752-796-2

    DOI :

    https://doi.org/10.1109/QELS.2005.1549097

    Medientyp :

    Aufsatz (Konferenz)

    Format :

    Elektronische Ressource

    Sprache :

    Englisch

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