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    1.55 /spl mu/m wavelength GaInAsP/InP distributed feedback lasers with deeply etched first order vertical grating

    1.55 /spl mu/m wavelength GaInAsP/InP distributed feedback lasers with deeply etched first order vertical grating


    1.55 /spl mu/m wavelength distributed feedback (DFB) lasers consisting of a first order vertical grating formed on the sidewalls of the high-mesa stripe geometry were realized by a simple electron beam lithography and CH/sub 4//H/sub 2/-RIE etching. The threshold current of 15 mA and the differential quantum efficiency of 55% were obtained for a 370 /spl mu/m long and 3.5 /spl mu/m wide stripe device.

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    Titel :

    1.55 /spl mu/m wavelength GaInAsP/InP distributed feedback lasers with deeply etched first order vertical grating

    Beteiligte:
    Hyo-Chang Kim, (Autor:in) / Wiedmarm, J. (Autor:in) / Matsui, K. (Autor:in) / Tamura, S. (Autor:in) / Arai, S. (Autor:in)
    Erschienen in:

    Technical Digest. CLEO/Pacific Rim 2001. 4th Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.01TH8557) ; Supplement ; 46-47 suppl.

    Erscheinungsdatum :

    2001-01-01

    Format / Umfang :

    206967 byte

    ISBN :

    0-7803-6738-3

    DOI :

    https://doi.org/10.1109/CLEOPR.2001.968027

    Medientyp :

    Aufsatz (Konferenz)

    Format :

    Elektronische Ressource

    Sprache :

    Englisch

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