In this paper, comparison of self-assembled quantum dot lasers with and without strain compensation layers is performed. It is found that by introducing a strain compensation layers into the barriers of a multiple stacked dot active region the performance of the quantum dot layer is enhanced and the device with strain compensation show lower threshold currents, higher internal efficiencies and less absorption.


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    Titel :

    Comparison of quantum dot lasers with and without strain compensation layers


    Beteiligte:
    Lever, P. (Autor:in) / Buda, M. (Autor:in) / Tan, H.H. (Autor:in) / Jagadish, C. (Autor:in)


    Erscheinungsdatum :

    2003-01-01


    Format / Umfang :

    147388 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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