In this paper, comparison of self-assembled quantum dot lasers with and without strain compensation layers is performed. It is found that by introducing a strain compensation layers into the barriers of a multiple stacked dot active region the performance of the quantum dot layer is enhanced and the device with strain compensation show lower threshold currents, higher internal efficiencies and less absorption.
Comparison of quantum dot lasers with and without strain compensation layers
2003-01-01
147388 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
Comparison of Quantum Dot Lasers With and Without Strain Compensation Layers
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