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    Growth of InGaAs quantum dots by metal organic chemical vapour deposition

    Growth of InGaAs quantum dots by metal organic chemical vapour deposition


    In/sub 0.5/Ga/sub 0.5/As quantum dots have been grown by metal-organic chemical vapour deposition (MOCVD). The size and density of these dots are strongly affected by the growth parameters. The growth rate and V/III affect the density of the dots. Growth interrupts without AsH/sub 3/ are found to cause a bimodal distribution in the dots, however a small amount of AsH/sub 3/ during the interrupt can suppress the formation of larger dots. A thin layer of GaP below the In/sub 0.5/Ga/sub 0.5/As quantum dots changes the formation of the dots. The dots are smaller in width and height. The luminescence from these dots is blueshifted due to interdiffusion between the dots and the GaP buffer layer.

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    Titel :

    Growth of InGaAs quantum dots by metal organic chemical vapour deposition

    Beteiligte:
    Lever, P. (Autor:in) / Tan, H.H. (Autor:in) / Jagadish, C. (Autor:in)
    Erschienen in:

    2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) ; 307-310

    Erscheinungsdatum :

    2002-01-01

    Format / Umfang :

    311215 byte

    ISBN :

    0-7803-7571-8

    ISSN :

    1097-2137

    DOI :

    https://doi.org/10.1109/COMMAD.2002.1237252

    Medientyp :

    Aufsatz (Konferenz)

    Format :

    Elektronische Ressource

    Sprache :

    Englisch

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