The high-power operation of the lateral modes stabilized 660 nm AlGaInP laser diode (LD) with the real-refractive-index waveguide structure has been achieved. The stable lateral mode operation up to 143 mW at 70/spl deg/C is realized. This is the highest power record among the narrow stripe 660-nm LDs. This LD Is suitable for the next generation high-speed (8x-) DVD-R/RW drives necessitating 140 mW class LD.


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    Titel :

    High-power, high-efficiency 660-nm laser diodes for DVD-R/RW


    Beteiligte:
    Yagi, T. (Autor:in) / Nishiguchi, H. (Autor:in) / Yoshida, Y. (Autor:in) / Miyashita, M. (Autor:in) / Sasaki, M. (Autor:in) / Sakamoto, Y. (Autor:in) / Ono, K. (Autor:in) / Mitsui, Y. (Autor:in)


    Erscheinungsdatum :

    2002-01-01


    Format / Umfang :

    101838 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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