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Lasers.
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``Feedforward'' Adaptive-Optic System Identification Analysis for Mitigating Aero-Optic Disturbances
``Impulsar'': Experimental and Theoretical Investigations
`Miracle' Mirror that Does Not Change the Phase of Reflected Wave
>10 Watt fiber laser source with 0.5-5 MHz repetition rate and 0.5-1.5 nsec pulse width [5662-81]
>90mW CW superluminescent output power from single-angled facet-ridge waveguide diode at 1.5mum
0.98m Multiple Quantum Well Tunneling Injection Lasers Extrapolated
0.98 m Wavelength InGaAs/GaAs/AlGaAs Strained Quantum-Well Laser Diodes with High Reliability
0.808-m InGaAsP/GaAs SCH lasers [2886-566]
1.1-kW high-efficiency LD-pumped Nd:YAG laser [3550-76]
1.1mumRange InGaAs VCSELs for High-Speed Optical Interconnections
1.2 mum Band High-density Multiple-wavelength Vertical Cavity Surface Emitting Laser Array
1.02 m Strained InGaAs/AlGaAs Double Quantum-Well High-Power Lasers with GalnP Buried Waveguides
1.3 and 1.5 mum InP-based Vertical Cavity Surface Emitting Lasers
1.3 micron In(Ga)As/GaAs Quantum-Dot Lasers and their Dynamic Properties
1.3-mum Continuously-Tunable Fiber-Coupled GaInNAs VCSEL
1.3 mum GaAsSb Resonant-Cavity Light-Emitting Diodes Grown on GaAs Substrate
1.3 mum GaInNAs Bandgap Difference Confinement (BDC) Semiconductor Optical Amplifier
1.3-mum GaInNAs VCSELs for 40-Gb/s CWDM Systems
1.3 mum High Density Quantum Dots Laser with Short Cavity and Cleaved Facet
1.3-mum InGaAlAs MQW RWG DFB Lasers for Uncooled 10Gb/s Datacom Applications
1.3 mum InGaAs Vertical-Cavity Surface-Emitting Lasers
1.3 mum Laterally Gain Coupled Tunable Distributed Feedback Lasers based on GaInNAs
1.3 mum light emission from Al~2O~3/Si~1~-~xGe~x/Si MOS tunnel diodes
1.3 mum Low Threshold Al-Oxide Confined Inner Stripe (ACIS) Lasers and ACIS Laser Array
1.3mum Quantum Dot Lasers with Single and Stacked Active Layers
1.3 mum-range GaInNAsSb VCSELs with high temperature operation
1.3 m GaInAsP Lasers with Bragg Reflector Consisted of Semiconductor and Air
1.3m High T~0 Strained MQW Laser With AlGaInAs SCH Layers on A Hetero-epitaxial InGaAs Buffer Layer
1.3 m InP/InGaAsP Digital Optical Switches with Extinction Ratio Of 30 dB
1.3 m MQW-DFB Laser with Negative Detuning for 80 ch-20 km AM-FDM Transmission
1.3m Polarization Insensitive Amplifier with Integrated Mode Transformer
1.3-m Spot-size converter Integrated Laser Diodes (SS-LDs) for Access Network Applications
1.4 kW lasing of COIL with 5-cm gain length and nitrogen dilution (Invited Paper) [3931-11]
1.5 micron Zn~2Si~0~.~5Ge~0~.~5O~4:Er Electroluminescent Waveguide Amplifiers
1.5 Watt Average Power LiNbO~3 Optical Parametric Oscillator at 3.8 m
1.5m Buried Heterostructure InGaAsP/InP MQW Lase with Native-Oxidized InAlAs Current Blocking Layer
1.06-m and 1.44-m Nd:YAG lasers with apodized reflectors [2788-27]
1.07 m (InAs)~1/(GaAs)~2 Short Period Superlattice Strained Quantum Well Ridge Waveguide Laser
1.8 Micron Continuous-Wave Raman Laser
1.27m Resonant Cavity PIN Photodetector using an InAs/GaAs Quantum Dot Active Region Grown on GaAs