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Jagadish, C.   Elektronische Ressource   Englisch   Auswahl aufheben

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    Quantum dot optoelectronic devices

    Jagadish, C. / Tan, H.H. | IEEE | 2005

    Quantum dot lasers and optoelectronic device integration

    Sears, K. / Mokkapati, S. / Buda, M. et al. | IEEE | 2005
    This paper highlights quantum dot (QD) lasers and QD optoelectronic device integration. The emission spectrum, room temperature ...

    InGaAs quantum dots-in-a-well photodetectors grown by metal organic chemical vapor deposition

    Jolley, G. / Tan, H.H. / Fu, L. et al. | IEEE | 2005
    The characteristics of metal organic chemical vapor deposition (MOCVD) grown InGaAs quantum dot infrared photodetectors based on the ...

    Integration of an InGaAs quantum-dot laser with a passive waveguide using selective-area MOCVD

    Mokkapati, S. / Tan, H.H. / Jagadish, C. | IEEE | 2005
    We present the design and operation of an InGaAs quantum-dot laser integrated with a passive waveguide. Selective-area MOCVD is used to ...

    Rapid thermal annealing study of InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition

    Fu, L. / Kuffner, P. / McKerracher, I. et al. | IEEE | 2005
    In this work, the effects of postgrowth rapid thermal annealing (RTA) on tuning the operating wavelength of self-assembled quantum dots ...

    The impact of AlGaAs cladding layers grown at low temperature on the performance of MOCVD based InAs/GaAs quantum dot laser diodes

    Sears, K. / Buda, M. / Tan, H.H. et al. | IEEE | 2005

    Effects of strain and barrier height of thin interlayer on InAs quantum dots grown on GaInAsP/InP (100) by metalorganic chemical vapor deposition

    Barik, S. / Tan, H.H. / Barik M, et al. | IEEE | 2005
    experimentally observed blue-shift in the photoluminescence of InAs quantum dots grown on GaInAsP/InP (100). ...

    Compound semiconductor optoelectronics research at the Australian National University

    Tan, H.H. / Buda, M. / Fu, L. et al. | IEEE | 2005
    materials, (iii) quantum dot electronic devices, (iv) integrated optoelectronic devices, (v) photonic crystals, (vi) semiconductor THz emitters and ...

    Room-temperature pulsed operation of InGaAsN quantum dot lasers

    Gao, Q. / Buda, M. / Tan, H.H. et al. | IEEE | 2004
    This study demonstrates the room-temperature pulsed operation of InGaAsN quantum dot laser diodes. Lasing action is exhibited at about 1078 ...

    MOCVD growth of InAs/GaAs quantum dots and laser diodes

    Stewart, K. / Tan, H.H. / Wong-Leong, J. et al. | IEEE | 2004
    This paper discusses the growth of InAs/GaAs quantum dots using MOCVD. Laser diode fabrication using stacked quantum dot structures is also ...

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