Electrical and optical properties of indium antimonide doped by cadmium and tellurium [5065-20]
IR photodetectors based on MBE-grown MCT layers (Invited Paper) [5065-04]
Competition of infrared detector technologies (Invited Paper) [5065-03]
Spatially nanostructured silicon for optical applications (Invited Paper) [5065-02]
The study of HgCdMnZnTe main-band parameters [5065-19]
Computational optoelectromechanics and its application to MEMS VCSELs (Invited Paper) [5065-01]
Electrical properties of HgMnTe Schottky diodes [5065-18]
Associative memory system based on volume holographic storage and wavelet transform [3801-28]
Optical amplification by two-wave mixing in lithium niobate waveguides [3801-34]
Edge enhancement in photorefractive polymer [3801-22]