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Halbleitertechnologie
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keywords:(Halbleitertechnologie)
Determination of trap depth by analysis of the thermoluminescence peak shape [3179-55]
Simple methods for the analysis of TL glow curves [3179-51]
Kinetics of luminescence due to spatial correlation of traps [3179-50]
Infrared thermal detectors versus photon detectors: II. focal plane arrays (Invited Paper) [3179-40]
Influence of internal structure on electrical properties of 1,4-cis polybutadiene films [3179-35]
Lithographic properties of perylenetetracarboxylic acid derivative films [3179-18]
Recent advances in TLM algorithms for semiconductor transport (Invited Paper) [3179-49]
Isothermal vapor phase epitaxy and rf sputtering for band gap engineered HgCdTe [3179-44]
Lifetimes and band structure of electroluminescence of ZnS:Mn based cells [3179-29]
Observation of the new lines in photoluminescence from MOCVD-grown GaAs [3179-24]
Nanocrystalline diamond for medicine [3179-14]
Activated lithium tetraborate and calcium sulphate in radiation dosimetry [3179-46]
Time-resolved spectroscopy of low-dimensional structures based on porous silicon [3179-07]
Mid-IR Semiconductor Lasers for Chemical Sensing
Determination of the activation energy of electron traps with fractional glow technique [3179-54]
HgCdTe focal plane arrays for high-performance infrared cameras (Invited Paper) [3179-38]