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Arakawa, Y.   Elektronische Ressource   Englisch   Auswahl aufheben

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    Lasing at ~1.3 μm from InAs Quantum Dots with GaInNAs Embedding Layers Grown by Metalorganic Chemical Vapor Deposition

    Hashimoto, R. / Kushibe, M. / Ezaki, M. et al. | IEEE | 2006

    Electroluminescence from a single quantum dot at telecommunication wavelength

    Miyazawa, T. / Tatebayashi, J. / Nakaoka, T. et al. | IEEE | 2005
    We have fabricated single quantum dot light emitting diodes and observed over 1.3/spl mu/m electroluminescence for the first time. The ...

    Quantum-dot lasing and photonic molecule behavior in microdisk lasers

    Baba, T. / Ide, T. / Ishi, S. et al. | IEEE | 2005

    Single photon emission from gallium nitride quantum dots at a record-short wavelength of 357 nm

    Kako, S. / Hoshino, K. / Ishida, S. et al. | IEEE | 2005
    We present measurements of the second-order coherence function on emission from single GaN quantum dots. A large degree of photon ...

    Temperature-Insensitive 10 Gb/s Direct Modulation Lasers with InAs Self-Assembled Quantum Dots at 1.3 μm

    Sugawara, M. / Otsubo, K. / Yamamoto, T. et al. | IEEE | 2005
    Based on our design on the maximum bandwidth for high-speed modulation and p-type doping into quantum dots for high temperature stability ...

    Room temperature lasing in InAs quantum-dot microdisk laser

    Ide, T. / Baba, T. / Tatebayashi, J. et al. | IEEE | 2004
    We achieved the first room-temperature lasing in a InAs quantum-dot microdisk at a wavelength of 1.23 /spl mu/m by photopumping. We ...

    Measurement and evaluation of chirp and linewidth enhancement factor of a 1.3 /spl mu/m quantum dot laser

    Hatori, N. / Ishida, M. / Ebe, H. et al. | IEEE | 2004
    We measured chirp of quantum dot lasers under 5 Gb/s direct-modulation, and the chirp was less than 2 GHz. From the results and some ...

    Design of high-speed directly-modulated self-assembled quantum-dot lasers aiming at 40 Gb/s operation: experiments and model

    Ishida, M. / Hatori, N. / Akiyama, T. et al. | IEEE | 2004
    Modulation characteristics of 1.3 /spl mu/m quantum-dot lasers were investigated experimentally and theoretically to evaluate the K-factor ...

    1.28 /spl mu/m InAs/GaAs quantum dot lasers with AlGaAs cladding layer grown at low temperature by metalorganic chemical vapor deposition

    Tatebayashi, J. / Hatori, N. / Ishida, M. et al. | IEEE | 2004
    This work reports the long-wavelength lasing of self-assembled InAs quantum dot lasers with AlGaAs cladding layer grown by MOCVD. By ...

    Wideband polarization insensitivity quantum dot optical amplifier

    Kita, T. / Jayavel, P. / Tanaka, H. et al. | IEEE | 2003
    Polarization insensitivity of InAs/GaAs quantum dot optical amplifier has been demonstrated by controlling dot shape. This polarization ...

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