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Optoelectronic devices
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keywords:(Optoelectronic devices)
Growth of InGaAs Quantum Dots by Metal Organic Chemical Vapour Deposition
Interdiffusion in InGaAs Quantum Dots by Ion Implantation
Properties of Radiative Recombination in GaAsN Epilayers
Atomic Relocation of Fast Diffusers in Impurity-Free Disordered p-type GaAs
Improvement of Kink-Free Operation in InGaAs/GaAs/AlGaAs High Power, Ridge Waveguide Laser Diodes
Strain Relaxation in Rapid Thermally Annealed InAs/GaAs Quantum Dot Infrared Photodetectors
Growth and Characterization of GaAsN Bulk Layer and (In)GaAsN Quantum-Well Structures
Suppression of Interdiffusion in In~0~.~5Ga~0~.~5As/GaAs Quantum Dots
Evolution of InGaAs/InP Quantum Well Intermixing as a Function of Cap Layer
Structural, Electrical and Optical Properties of MeV As+ Ion Implanted InP