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keywords:(Materials science)
Thermodiffusion in Si-X-Ge~3~3As~1~2Se~5~5 (X:Sb,Bi) interface [3890-82]
Photosensitization of Cd~xHg~1~-~xTe epitaxial films by laser-induced shock wave [3890-71]
Polycrystallinity to epitaxy: AFM study of CdTe hydrothermal electrodeposition [3890-69]
Changes of defect structure of ZnSe crystals under passing of laser-induced shock wave [3890-68]
Radiation defect band in Pb~1~-~xSn~xSe(x0.03) alloys irradiated with electrons [3890-54]
Infrared absorption and dielectric properties of Li-Cu ferrite [3890-47]
Charge impurity states of In, Ga, Ge in narrow-gap PbTe [3890-26]
Currents in Hg~1~-~xCd~xTe photodiodes [3890-22]
New film materials for optoelectronics based on CdAl(Ga)~2S(Se)~4 compounds [3890-20]
Optical properties of Hg~1~-~xCd~xTe/CdTe epitaxial films with graded band gap [3890-13]
Development of stone-chipping resistant Zn-Ni electroplated steel sheet (SZ)
Model for a technological procedure of chemical profile etching [3890-81]
Light scattering in a filled nematic cell [3890-45]
Influence of uniaxial pressure on the photoionization of h-centers in semiconductors [3890-33]
Optical properties of semiconducting iron disilicide thin films [3890-29]
Acoustodynamic influence on electronic properties of Cd~xHg~1~-~xTe alloys [3890-87]
Peculiarities of preparation and main optical properties of zinctetratiogallate films [3890-75]
Superluminal transfer of information in electrodynamics [3890-50]
Transport properties of p-Hg~1~-~xCd~xTe (x approximately equal to 0.22) [3890-49]
Conditions of arising and nature of the dislocation magnetism of deformed silicon crystals [3890-41]
A new paradigm on battery powered embedded system design based on User-Experience-Oriented method
Precipitation mechanism of GaAs~1~-~xP~x/GaAs in the isothermal CVD method [3890-78]
Effect of laser irradiation on photoconductivity of GaAs crystals [3890-72]
Impurity profile determination by the optimal parameter choice method [3890-44]
Interference IR filters on CdSb monocrystal substrates [3890-17]
Epitaxial lead-chalcogenide on silicon layers for thermal imaging applications [3890-03]
Group-theory approach within the framework of the tight-binding model [3890-46]
Photoelectric properties of polycrystalline layers based on halogen-doped PbTe [3890-39]
Photoelectric and kinetic properties of PbTe(Ga) films [3890-35]
Vertical transport in GaAs/GaAlAs QW-GRIN structures studied by photocurrent spectroscopy [3890-01]
Trial production and strength assessment of titanium alloy connecting rods
Radiation-acoustic treatment of gallium phosphide light diodes [3890-90]
Temperature stability of the IBM-formed Cd~xHg~1~-~xTe p-n structure [3890-83]