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High-Power Single Mode InGaAs Sub-Monolayer Quantum-Dot Photonic-Crystal VCSELs

Yang, H.P.D. / Hsiao, R.S. / Lin, G. et al. | IEEE | 2006

High-power GaInAs/(Al)GaAs quantum dot lasers with optimized waveguide design for high brightness applications

Deubert, S. / Klopf, F. / Reithmaier, J.P. et al. | IEEE | 2002

Quantum dot lasers with high cw output power, very low temperature shift of emission wavelength and vertical far field angles below 35/spl ...

High-Power and Broad-Band Quantum Dot SLDs for Optical Coherence Tomography

Groom, K.M. / Ray, S.K. / Alexander, R.R. et al. | IEEE | 2006

High power (3W) GaInAs/(AI)GaAs quantum dot tapered laser arrays with high wavelength stability and low divergence

Auzanneau, S.-C. / Calligaro, M. / Krakowski, M. et al. | IEEE | 2004

High power (3W) and low divergence (4/spl deg/ at FWHM) are demonstrated at 990 nm using arrays of index guided GaInAs/(Al)GaAs quantum dot ...

High performance long-wavelength QD diode lasers on GaAs substrates

Maleev, N.A. / Kovsh, A.R. / Zhukov, A.E. et al. | IEEE | 2002

Long-wavelength GaAs-based quantum dot laser diodes with external differential efficiency of 84...88% combined with low internal loss and ...

High bandwidth modulation of multiple contact 1.3 micron quantum dot lasers

Wonfor, A. / Tan, K.T. / Ribbat, C. et al. | IEEE | 2002

By forming twin contacts on a 1300 nm quantum dot laser, a small signal modulation bandwidth of 4.6 GHz is achieved. This bandwidth value ...

Growth of InGaAs quantum dots by metal organic chemical vapour deposition

Lever, P. / Tan, H.H. / Jagadish, C. | IEEE | 2002

In/sub 0.5/Ga/sub 0.5/As quantum dots have been grown by metal-organic chemical vapour deposition (MOCVD). The size and density of these ...

Growth and spectroscopy of II-VI CdSe quantum dots

Cavenett, B.C. / Tang, X. / Bradford, C. et al. | IEEE | 2002

In this paper we review the recent progress in the growth and spectroscopy of CdSe quantum dots. In particular, atomic layer epitaxy (ALE ...

Growth and properties of indium nitride thin films and InN nanostructures

Briot, O. / Ruffenach, S. / Gil, B. | IEEE | 2005

The growth of indium nitride quantum dots are studied. An investigation of the dot built-in strain, at the nanometric scale, performed ...

Growth and optical properties of GaN-based quantum dots

Hyun Jin Kim, / Hyunseok Na, / Soon-Yong Kwon, et al. | IEEE | 2003

GaN-based quantum dots were grown by low-pressure metalorganic chemical vapor depositions. High-density In-rich InGaN/GaN quantum dots were ...

Ground and excited-state modelocking in a two-section quantum-dot laser

Cataluna, M.A. / Rafailov, E.U. / McRobbie, A.D. et al. | IEEE | 2005

quantum-dot laser. The change of generation between these states in the mode-locking regime is fully controllable. ...

Gaussian process in control : model predictive control with guarantees and control of scanning quantum dot microscopy

Freier Zugriff

Maiworm, Michael | BASE | 2021

scanning quantum dot microscopy, which is a recently developed microscopy technique that generates images of electrostatic potentials of ...

GaInNAs and quantum dot lasers - GaAs-based lasers for telecommunications

Forchel, A. | IEEE | 2004

)As quantum dots (QD). Routes for further improvements like the use of GaInNAsSb as proposed by J. Harris et al., Stanford, will be discussed. ...

Gain measurement of broadband quantum dot SOA by two-section technique

Yi-Shin Su, / Wei-Che Chang, / Chao-Hsin Wu, et al. | IEEE | 2005

Gain dynamics and spectral hole-burning in In(Ga)As self-organized quantum dots

Kyoungsik Kim, / Norris, T.B. | IEEE | 2001

Gain and carrier distribution in InGaAs quantum dot lasers

Smowton, P.M. | IEEE | 2003

-using measurements of gain and carrier distribution in InGaAs quantum dot laser structures. ...

GaAs-Based InAs/InGaAs Quantum Dot Vertical Cavity and Vertical External Cavity Surface Emitting Lasers Emitting Near 1300 nm

Lott, J.A. / Kovsh, A.R. / Ledentsov, N.N. et al. | IEEE | 2005

quantum dot active regions grown on GaAs substrates that emit over 1 mW continuous wave peak power at room temperature are demonstrated. ...

GaAs-based bipolar cascade InAs/InGaAs quantum dot VCSELs emitting near 1300 nm

Lott, J.A. / Stintz, A. / Kovsh, A.R. et al. | IEEE | 2005

This study presents the design and performance of self-assembled quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) in a ...

Formation of Landau levels in CdSSe quantum dots by a magnetic field

Yumoto, J. / Uesugi, N. | IEEE | 1995

Formation of InGaAs/GaAs quantum-well dots by using self-assembled InAs quantum dots as stressors

Xiaodong Mu, / Yujie J. Ding, / Zhiming Wang, et al. | IEEE | 2003

Formation and characteristics of wide band gap II-VI semiconductor quantum dots

Fan, X.W. / Shan, C.X. / Yang, Y. et al. | IEEE | 2003

CdSe and ZnCdSe quantum dots (QDs) were grown under Stranski-Krastanow (S-K) mode by low-pressure metalorganic chemical vapor deposition ...

Fiber-coupled, high-Q AlGaAs microdisk cavities for chip-based cavity QED

Srinivasan, K. / Barclay, P.E. / Borselli, M. et al. | IEEE | 2005

Fiber-coupled, high-quality-factor (Q > 10/sup 5/) AlGaAs microdisks with embedded quantum dots are demonstrated. Microdisk lasers ...

Fiber-coupled, high-Q AlGaAs microdisk cavities for chip-based cavity QED

Painter, O. / Srinivasan, K. / Borselli, M. et al. | IEEE | 2005

provide an efficient optical channel for studying and manipulating the microcavity-quantum dot system, with in-fiber cavity mode collection ...

Femtosecond pump-probe studies on carrier dynamics in InGaN/GaN quantum wells with indium aggregated quantum dot structures

Hsiang-Chen Wang, / Cheng-Yeh Tsai, / Yung-Chen Cheng, et al. | IEEE | 2003

quantum dots, which were formed through indium aggregation in InGaN/GaN quantum well structures of various parameters. ...

Femtosecond photonic devices using nano-structure materials for ultrafast optical communications

Wada, O. | IEEE | 2003

progresses in various femtosecond photonic devices including quantum well intersubband transition switches and quantum dot optical amplifier devices. ...

Femtosecond interactions in semiconductor quantum dots

Klimov, V.I. | IEEE | 2001

as small as 5%. These nanoparticles are also known as nanocrystals or colloidal quantum dots (QDs). The sub-10-nm size range corresponds to a ...

Fast quantum-dot saturable absorber for passive mode-locking of solid-state lasers

Rafailov, E.U. / White, S.J. / Lagatsky, A.A. et al. | IEEE | 2003

Far-field patterns of Quantum Well, Quantum Dash, and Quantum Dot Laser Diodes

Ding, Y. H. / Tan, C. L. / Hongpinyo, V. et al. | IEEE | 2008

), and quantum dot (Qdot) lasers to study the effect of different active gain mediums of semiconductor lasers on the optical beam quality and ...

Fabrication of nanostructures using electron beam interference technique-a proposal

Gunawan, O. / Ng, S.L. / Ooi, C.H. et al. | IEEE | 1999

quantum dot fabrication. In this paper, a method based on electron beam interference, for nanostructures fabrication is proposed. Nanoscale wires ...

Fabrication of InGaAs quantum dots by metal organic chemical vapor deposition and selective area epitaxy

Elarde, V.C. / Swint, R.B. / Yeoh, T.S. et al. | IEEE | 2004

We have demonstrated the fabrication of uniform arrays of quantum dots by metal organic chemical vapor deposition using electron beam ...

Fabrication and characterization of semiconductor quantum dot lasers

Charbonneau, S. | IEEE | 1997

External feedback effects on a quantum dot laterally loss coupled distributed feedback laser

Su, H. / Malloy, K.J. / Lester, L.F. et al. | IEEE | 2003

The critical external feedback ratio for coherence collapse in a quantum dot laterally loss coupled distributed feedback (QD LLC DFB) laser ...

Experimental observation of the magnitude and sign of the third order optical nonlinearity in CdS quantum dots in a dendrimer matrix

Etienne, M. / Walser, A.D. / Dorsinville, R. et al. | IEEE | 2005

We have investigated the nonlinear optical response of CdS quantum dots in a poly(propyleneimine) dendrimer matrix having diaminobutane ...

Exciton Rabi oscillation in single quantum dot: temporal measurement of oscillation and corresponding energy level splitting

Kamada, H. / Ando, H. / Takagahara, T. et al. | IEEE | 2001

A spectroscopic method, which enables characterization of a single isolated quantum dot and quantum wave function interferometry is applied ...

Excitation induced polarization decay in semiconductor quantum dots

Schneider, H.C. / Chow, W.W. / Koch, S.W. | IEEE | 2005

Excitation induced polarization dephasing in semiconductor quantum-dots is computed using a microscopic approach. The Coulomb interaction ...

Excitation dependence of lateral beam width in a quantum-dot laser

Schneider, H.C. / Chow, W.W. | IEEE | 2001

We investigate the influence of the quantum-dot active material on the lateral field distribution in an edge-emitting geometry. We use the ...

Evidence for reduced thermal conductivity in quantum dot active region from chirp characteristics in InGaAs/GaAs quantum dot lasers

Tan, H. / Kamath, K. / Bhattacharya, R. et al. | IEEE | 2004

This study presents evidence for reduced thermal conductivity in quantum dot (QD) active region from chirp characteristics in InGaAs/GaAs ...

Epitaxial growth and physics of nanostructures for quantum dot lasers

Arakawa, Y. | IEEE | 1996

We succeeded in the first demonstration of a vertical microcavity quantum dot laser operated at 77K. The microcavity (/spl lambda/=985nm ...

Enhancement of resonant Raman scattering from ZnO quantum dots

Wen-Feng Hsieh, / Hsu-Cheng Hsu, / Hsin-Ming Cheng, et al. | IEEE | 2005

Efficient resonant Raman scattering (RRS) were observed in ZnO quantum dots (ZnO-QDs). The size dependent shift of UV-emission reveals ...

Enhanced Terahertz Emission from InAs Quantum Dots on GaAs

Park, H. / Kim, J. / Moon, K. et al. | IEEE | 2006

pulsed THz radiation for time-domain THz spectroscopy and THz imaging. We show that InAs quantum dots on GaAs can be used to significantly ...

Enhanced phonon-assisted absorption of InGaAs quantum dots confined in a planar microcavity

Wang, X.Y. / Shih, C.K. / Zhang, J.Y. et al. | IEEE | 2005

Enhanced mode extraction in AlO/sub x//GaAs microcavity pillars and circular gratings

Su, M. / Mirin, R. | IEEE | 2005

Here we report enhanced spontaneous emission intensity in AlOx/GaAs micropillars with InGaAs quantum dot (QD) ensemble emitters, measured ...

Engineering the /spl alpha/-factor in quantum dot-in-a-well lasers

Ukhanov, A.A. / Stinz, A. / Eliseev, P.G. et al. | IEEE | 2004

The linewidth enhancement factor in quantum dot (QD) in a quantum well (QW) laser structures was observed to decrease from 2.5 to 1 as ...

Engineering of absorbing medium for quantum dot infrared photodetectors

Yakimov, M. / Sergeev, A. / Pogrebnyak, V. et al. | SPIE | 2013

relatively high density of quantum dots, small concentration of defects related to quantum dot growth, and suppressed carrier capture by QDs ...

Electronic shell structure in single InAs/InGaAs quantum dots emitting at 1.3 /spl mu/m

Cade, N.I. / Gotoh, H. / Kamada, H. et al. | IEEE | 2005

Photoluminescence spectra from single In(Ga)As:Bi quantum dots in a quantum well show low-temperature emission around 1300 nm. We observe ...

Electron and exciton spectra in opened nanoheterosystems

Tkach, M.V. / Holovatsky, V.A. / Berezovs'ky, Y.M. et al. | IEEE | 2003

The theory of electron, hole and exciton spectra in the opened complicated spherical quantum dots (QD) in the medium is developed in the ...

Electron and exciton-phonon interaction in quantum dots and wires: the peculiarities of Raman spectrum

Tkach, M.V. / Zharkoy, V.P. / Voitsekhivska, O.M. et al. | IEEE | 2003

symmetry of quantum dot and cylindrical quantum wire in the Raman spectra one cannot see the interface phonon repeatings. There are only the ...

Electroluminescence from a single quantum dot at telecommunication wavelength

Miyazawa, T. / Tatebayashi, J. / Nakaoka, T. et al. | IEEE | 2005

We have fabricated single quantum dot light emitting diodes and observed over 1.3/spl mu/m electroluminescence for the first time. The ...

Electroluminescence evolution of Ge quantum-dot diodes with the fold number

Chen, K.T. / Peng, Y.H. / Hsu, C.H. et al. | IEEE | 2004

Electroluminescence and materials characterization of InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition

Huffaker, D.L. / EL-Emawy, A.R. / Birudavolu, S. et al. | IEEE | 2002