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Optik
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keywords:(Optik)
`Miracle' Mirror that Does Not Change the Phase of Reflected Wave
0.98 m Wavelength InGaAs/GaAs/AlGaAs Strained Quantum-Well Laser Diodes with High Reliability
1.1mumRange InGaAs VCSELs for High-Speed Optical Interconnections
1.2 mum Band High-density Multiple-wavelength Vertical Cavity Surface Emitting Laser Array
1.3 and 1.5 mum InP-based Vertical Cavity Surface Emitting Lasers
1.3 micron In(Ga)As/GaAs Quantum-Dot Lasers and their Dynamic Properties
1.3-mum Continuously-Tunable Fiber-Coupled GaInNAs VCSEL
1.3 mum GaAsSb Resonant-Cavity Light-Emitting Diodes Grown on GaAs Substrate
1.3 mum GaInNAs Bandgap Difference Confinement (BDC) Semiconductor Optical Amplifier
1.3-mum GaInNAs VCSELs for 40-Gb/s CWDM Systems
1.3 mum High Density Quantum Dots Laser with Short Cavity and Cleaved Facet
1.3-mum InGaAlAs MQW RWG DFB Lasers for Uncooled 10Gb/s Datacom Applications
1.3 mum InGaAs Vertical-Cavity Surface-Emitting Lasers
1.3 mum Low Threshold Al-Oxide Confined Inner Stripe (ACIS) Lasers and ACIS Laser Array
1.3mum Quantum Dot Lasers with Single and Stacked Active Layers
1.3 m GaInAsP Lasers with Bragg Reflector Consisted of Semiconductor and Air
1.3 m InP/InGaAsP Digital Optical Switches with Extinction Ratio Of 30 dB
1.3m Polarization Insensitive Amplifier with Integrated Mode Transformer
1.3-m Spot-size converter Integrated Laser Diodes (SS-LDs) for Access Network Applications
1.3 m tapered active stripe lasers with high slope efficiency and large beam spot-size
1.5 micron Zn~2Si~0~.~5Ge~0~.~5O~4:Er Electroluminescent Waveguide Amplifiers
1.5m Buried Heterostructure InGaAsP/InP MQW Lase with Native-Oxidized InAlAs Current Blocking Layer
1.8 Micron Continuous-Wave Raman Laser
1.8 Petabit/s downstream capacity WDM passive optical network
1.27m Resonant Cavity PIN Photodetector using an InAs/GaAs Quantum Dot Active Region Grown on GaAs
1.047m Synchronously Pumped Optical Parametric Oscillator in Bulk Periodically Poled LiNbO~3
1.52 - 1.59 m range different-wavelength modulator. integrated DFB-LDs fabricated on a single wafer
1.54um Vertical-Cavity Surface-Emitting Laser Transmission at 2.5 Gbit/s
1.55 Micron In-plane Lasers with p-Al~0~.~7Ga~0~.~3As Cladding Layers
1.55-mum Bottom-Emitting InAlGaAs VCSELs with Al~2O~3/a-Si Thin-Film Pairs as a Top Mirror
1.55 mum GaInNAsSb Lasers on GaAs
1.55 nm-wavelength CW Microchip Lasers
1.55 µm DFB lasers incorporating etched lateral taper spot size converters
1.55 m Complex-Coupled DFB Lasers with Quaternary Overgrown Gratings
1.55 m Dual Polarization Lasers Containing Tensile and Compressive Strained Quantum Wells
1.55m Erbium-doped Fiber Amplifiers
1.56-2.03 mum Widely Wavelength Tunable Femtosecond Soliton Pulse Generation Using Optical Fibers
1.59 m Lattice-Matched AlGaInAs/InGaAs/InP Lasers with Digital Alloy Barrier and Waveguide Layers