16%-efficient GaAs solar cell after 1015 cm-2, 1 MeV radiation

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16%-efficient GaAs solar cell after 10¹⁵ cm^-2, 1 MeV radiation

Bertness, K.A. / Ristow, M.L. / Klausmeier-Brown, M.E. / Grounner, M. / Kuryla, M.S. / Werthen, J.G.

Efficiency and related device parameter data are presented for p-n GaAs solar cells before and after irradiation with 1 MeV electrons for a total fluence of 10¹⁵ cm^-2. The post-radiation efficiency of most cells dropped to 75% of the pre-irradiation value. In separate experiments, the effects of base doping and emitter thickness were investigated. A base doping around 1*10¹⁷ cm^-3 gave the highest 1 sun, AM0 efficiencies both before and after irradiation at 22.0% and 15.9%, respectively. Reducing base doping levels to 1*10¹⁷ cm^-3 and decreasing the emitter thickness to 0.3-0.4 mu m for p-n cells led to improvements in radiation hardness as measured by EOL/BOL (end-of-life/beginning-of-life) efficiency ratios for irradiation of 10¹⁵ cm^-2 electrons at 1 MeV. Emitter thickness had a less dramatic effect on efficiencies and radiation resistance, with the optimum thickness appearing at about 0.28 mu m. These results are supported by modeling calculations.

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Dokumentinformationen

Titel :

16%-efficient GaAs solar cell after 10¹⁵ cm^-2, 1 MeV radiation

Weitere Titelangaben:

GaAs-Solarzellen mit einem Wirkungsgrad von 16 % nach 1015cm-2, 1 MeV-Strahlung

Beteiligte:

Bertness, K.A. (Autor:in) / Ristow, M.L. (Autor:in) / Klausmeier-Brown, M.E. (Autor:in) / Grounner, M. (Autor:in) / Kuryla, M.S. (Autor:in) / Werthen, J.G. (Autor:in)

Erschienen in:

Conference Record of the Twenty First IEEE Photovoltaic Specialists Conference ; 2 ; 1231-1234

Erscheinungsdatum :

1990

Format / Umfang :

4 Seiten, 7 Quellen

Medientyp :

Aufsatz (Konferenz)

Format :

Sprache :

Englisch

Schlagwörter :