GaAs ICs: the technology arrives
GaAs ICs: the technology arrives
- Neue Suche nach: Milano, R.
- Neue Suche nach: Milano, R.
GaAs ICs have attracted considerable interest because they are said to offer performance advantages. Tests indicate that high-speed or lower-power operation at speeds comparable to silicon emitter-coupled logic (ECL) ICs is possible. These demonstrations included 4K static random access memory (SRAM) devices and gate arrays, proving that the advantages of GaAs ICs could be realized in complex circuits suitable for real systems applications. In addition, inherent radiation hardness and the ability to operate over a wide temperature range made GaAs digital ICs attractive for use in harsh and demanding environments. Technology development efforts in the United States, Japan and Europe are exploring and extending the limits of this technology. For advocates of GaAs technology, manufacturability is of secondary importance. Several commercial suppliers of GaAs digital circuits and the DARPA-funded pilot lines have established manufacturable approaches and have overcome technology acceptance barriers. Military systems require high performance ICs for air defense, communications, image processing, electronic warfare (EW) and electronic intelligence (Elint). These systems are found in both ground-based and space-based applications and demand the best available radiation tolerance, operating temperature range and operating frequency. All these requirements can be met by GaAs ICs.
Dokumentinformationen
GaAs ICs: the technology arrives
GaAs-IC's: Technologie fuer die Militaertechnik
Defense Electronics ; 20 , 11 ; 111-116
1988
6 Seiten
Aufsatz (Zeitschrift)
Englisch
KOMMUNIKATIONSSYSTEM , DIGITALE INTEGRIERTE SCHALTUNG , GALLIUMARSENID , DREI-FUENF-VERBINDUNG , INTEGRIERTE HALBLEITERSCHALTUNG , GATE-ARRAY-SCHALTUNG , TEMPERATUR , EUROPA , BILDVERARBEITUNG , ELEKTRONISCHE KAMPFFUEHRUNG , MILITAERISCHES GERAET , VEREINIGTE STAATEN VON AMERIKA , JAPAN , INTEGRIERTE SCHALTUNGSTECHNOLOGIE , SRAM (STATIC RAM)
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