Development of the GaAs solar cell for space application
Development of the GaAs solar cell for space application
- Neue Suche nach: Chen, Mingbo
- Neue Suche nach: Zhang, Zhongwei
- Neue Suche nach: Chen, Mingbo
- Neue Suche nach: Zhang, Zhongwei
To meet the requirements of space use, the authors developed new multiwafer LPE technique. This technique applied squeezing multiwafer graphite boat, with 50 wafers (2.3x2.3 cm2) or 20 wafers (2.3x4.3 cm2) produced at each epitaxial growth. The authors focused on the control technique for the epitaxial layers parameters. Experimental results demonstrated that epitaxial growth at low temperatures could produce ideal GaAs solar cell with good repeatability. Up to now, the efficiencies of GaAs solar cell, prepared by this technique, have reached 18.60 % (2x2 cm2, AM0) and 18.39 % (2x4 cm2, AM0), respectively. Average efficiency of the cells, prepared in small lot is 17.5 % (AM0), and all the samples proved qualified in space environment simulation test.
Dokumentinformationen
Development of the GaAs solar cell for space application
Entwicklung von GaAs-Solarzellen für die Raumfahrt
1996
4 Seiten, 7 Bilder, 2 Tabellen, 7 Quellen
Aufsatz (Konferenz)
Englisch
Sonnenbatterie , Flüssigphasenepitaxie , GaAs-AlGaAs , Wirkungsgrad , Epitaxialwachstum , Temperaturgang , Kleinserienfertigung , Raumfahrttechnik , Antireflexschicht , Temperaturregelung , Ladungsträgerdichte , Dotierungsprofil , Leerlaufspannung , Kurzschlussstrom , Wafer (Halbleiterplättchen) , Schichtdicke
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