The effects of 1 MeV electron irradiation on silicon solar cells with AMO efficiencies ranging from 17 % to 17.7 % are described. These cells wre processes on low-resistivity FZ substrates using techniques recently developed for high-efficiency terrestrial silicon solar cells. Not surprisingly, results indicate that these cells are more susceptible to radiation damage. However, they do maintain a greater overall power output than conventional cells to which they were compared. Furthermore, these cells do not demonstrate post-electron irradiation photon decay as has been described for cells processsed on 1-10 ohm-cm float-zone silicon.
Radiation characteristics of low resistivity float zone silicon solar cells
Strahlungsschaedigung von Silicium-Sonnenzellen mit niederohmiger Schmelzzone
1987
3 Seiten, 4 Bilder, 1 Tabelle, 6 Quellen
Aufsatz (Konferenz)
Englisch