In this paper, a rugged bipolar transistor has been designed to withstand high levels of ESD making it well suited for UHF automotive electronics applications. The BFP460 from Infineon Technologies is a general-purpose transistor that is electrostatic-discharge (ESD)-hardened for such applications. It benefits from a silicon-bipolar process technology with 23-GHz transition frequency and can safely withstand ESD pulses of 1500 W between any pair of terminals. The effectiveness of this device is demonstrated in a UHF low-noise amplifier (LNA) that is ideal for automotive use.


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    Titel :

    ESD-hardened device fuels UHF amplifiers


    Beteiligte:
    Huber, J. (Autor:in) / Wevers, G. (Autor:in)

    Erschienen in:

    Microwaves & RF ; 43 , 7 ; 57-64


    Erscheinungsdatum :

    2004


    Format / Umfang :

    8 Seiten, 5 Quellen



    Medientyp :

    Aufsatz (Zeitschrift)


    Format :

    Print


    Sprache :

    Englisch




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