A new high reliability 80V 400A power MOSFET module in trench gate technology for 42V powernet

Sie sind hier: Homepage > Suche

A new high reliability 80V 400A power MOSFET module in trench gate technology for 42V powernet

Tchouangue, G. / Nishitani, K. / Nagashima, Y. / Onodera, J. / Tsunoda, T.

The load limit has been reached in todays 14 V automotive power supply system. The development of a 42V power supply system is necessary. In this paper the authors present the main design features and performance of Toshiba's new concept power MOSFET module adopting the latest technology for both chip design and packaging for 42 V systems. A newly developed 80 V Trench Gate MOSFET is used and new packaging technology such as Ultrasonic connection (US connection) for power electrodes as well as through-hole Al wire bonding for signal connections are adopted. The power module, power terminals are nut and bolt type. Mechanical stress simulation under temperature cycling mode was carried out to confirm reliabillty suitable for Automobile applications. This new MOSFET Module technology is expected to be suitable for automotive applications, offering lower power loss and smaller size. As a consequence, total system performance will be improved.