Enhanced Sb2Se3 solar cell performance through theory‐guided defect control

Sie sind hier: Homepage > Suche

Enhanced Sb2Se3 solar cell performance through theory‐guided defect control

Liu, Xinsheng

Defects present in the absorber layer largely dictate photovoltaic device performance. Recently, a binary photovoltaic material, Sb 2 Se 3 , has drawn much attention due to its low‐cost and nontoxic constituents and rapid performance promotion. So far, however, the intrinsic defects of Sb 2 Se 3 remain elusive. Here, through a combined theoretical and experimental investigation, we revealed that shallow acceptors, Se Sb antisites, are the dominant defects in Sb 2 Se 3 produced in an Se‐rich environment, where deep donors, Sb Se and V Se , dominate in Sb 2 Se 3 produced in an Se‐poor environment. We further constructed a superstrate CdS/Sb 2 Se 3 thin‐film solar cell achieving 5.76% efficiency through in situ Se compensation during Sb 2 Se 3 evaporation and through careful optimization of absorber layer thickness. The understanding of intrinsic defects in Sb 2 Se 3 film and the demonstrated success of in situ Se compensation strategy pave the way for further efficiency improvement of this very promising photovoltaic technology. Copyright © 2017 John Wiley & Sons, Ltd. We systematically investigate the defect properties of Sb 2 Se 3 film, demonstrating that deep donors (V Se and Sb Se ) form easily under Se‐poor condition, while the more benign shallow acceptor Se Sb dominates in Se‐rich environment. A record efficiency of 5.76% is obtained for CdS/Sb 2 Se 3 thin‐film solar cells through theory guided in situ Se compensation.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

Exportieren, teilen und zitieren

Dokumentinformationen

Titel :

Enhanced Sb2Se3 solar cell performance through theory‐guided defect control

Beteiligte:

Liu, Xinsheng (Autor:in) / Xiao, Xun / Yang, Ye / Xue, Ding‐Jiang / Li, Deng‐Bing / Chen, Chao / Lu, Shuaicheng / Gao, Liang / He, Yisu / Beard, Matthew C

Erschienen in:

Progress in photovoltaics ; 25 , 10

Erscheinungsdatum :

2017

ISSN :

1062-7995

DOI :

https://doi.org/10.1002/pip.2900

Medientyp :

Aufsatz (Zeitschrift)

Format :

Sprache :