Report describes experiments that used reflection high-energy-electron diffraction (RHEED) to investigate behavior of GaAs surfaces during and after growth by molecular-beam epitaxy (MBE). Experimental results show dynamic RHEED measurements useful both as probes of surface and growth kinetics and as methods for determining and reproducing surface and growth conditions.


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    Titel :

    Electron-Diffraction Analysis of Growth of GaAs


    Beteiligte:
    Lewis, B. F. (Autor:in) / Grunthaner, F. J. (Autor:in) / Madhukar, A. (Autor:in) / Lee, T. C. (Autor:in) / Fernandez, R. (Autor:in)

    Erschienen in:

    Erscheinungsdatum :

    1986-05-01



    Medientyp :

    Sonstige


    Format :

    Keine Angabe


    Sprache :

    Englisch


    Schlagwörter :


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