Report describes experiments that used reflection high-energy-electron diffraction (RHEED) to investigate behavior of GaAs surfaces during and after growth by molecular-beam epitaxy (MBE). Experimental results show dynamic RHEED measurements useful both as probes of surface and growth kinetics and as methods for determining and reproducing surface and growth conditions.
Electron-Diffraction Analysis of Growth of GaAs
NASA Tech Briefs ; 10 , 3
1986-05-01
Sonstige
Keine Angabe
Englisch
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