The studies that are described were aimed at reduction of the capacitance of IV-VI semiconductor photodiodes, with particular emphasis upon 3-5 micrometer devices that are suitable for lightweight thermal imaging systems. The starting point was the thin-film Pb barrier IV-VI photodiodes that were discovered and developed by Ford Research Staff.


    Zugriff

    Zugriff über TIB

    Verfügbarkeit in meiner Bibliothek prüfen


    Exportieren, teilen und zitieren



    Titel :

    Development of High-Speed IV-VI Photodiodes


    Beteiligte:
    H. Holloway (Autor:in) / M. D. Hurley (Autor:in) / E. B. Schermer (Autor:in) / K. F. Yeung (Autor:in)

    Erscheinungsdatum :

    1976


    Format / Umfang :

    168 pages


    Medientyp :

    Report


    Format :

    Keine Angabe


    Sprache :

    Englisch




    High-Speed, High-Reliability Superlattice Avalanche Photodiodes

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1998


    High Speed Resonant Cavity Enhanced Schottky Photodiodes

    Islam, S. / Oezbay, E. / Aytur, O. et al. | British Library Conference Proceedings | 1997


    High-Speed, Low-Noise Resonant-Cavity Avalanche Photodiodes

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996


    High-speed, low-noise resonant-cavity avalanche photodiodes

    Hui Nie, / Anselm, K.A. / Hu, C. et al. | IEEE | 1996


    High-Speed and High-Output-Power Uni-Traveling-Carrier Photodiodes

    IEEE Lasers and Electro-optics Society | British Library Conference Proceedings | 2005