We demonstrate a 1.55-/spl mu/m InAlGaAs/InP vertical-cavity surface-emitting laser grown by metal-organic chemical vapor deposition. AI/sub 2/O/sub 3/-Si thin-film pairs and InAlGaAs/InAlAs epitaxial layers are used as a top mirror and a bottom-side output coupler, respectively. Direct modulation characteristics through single mode fiber are reported in the speed of 2.5 Gbit/s.


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    Titel :

    1.55-/spl mu/m bottom-emitting InAlGaAs VCSELs with Al/sub 2/O/sub 3//a-Si thin-film pairs as a top mirror


    Beteiligte:
    Hyun-Woo Song, (Autor:in) / Won Seok Han, (Autor:in) / Jong-Hee Kim, (Autor:in) / O-Kyun Kwon, (Autor:in) / Young-Gu Ju, (Autor:in) / Jong-Hyun Lee, (Autor:in) / Sang-Hee KoPark, (Autor:in) / Seung-Goo Kang, (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    99906 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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