Highly Strained 1.3m InAsP/InGaAsP Lasers With Low Threshold Currents Grown by Gas-Source Molecular Beam Epitaxy

IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996

Highly strained 1.3 /spl mu/m InAsP-InGaAsP lasers with low threshold currents grown by gas-source molecular beam epitaxy

Thiagarajan, P. / Giudice, G.E. / Temkin, E. et al. | IEEE | 1996

High Power InGaAsP-based Laser Diodes

Razeghi, M. | British Library Online Contents | 1995

Thermal analysis of ridge waveguide InAsP/InGaAsP MQW lasers by using finite-element method

He, Youjun / Zhang, Y. G. / Nan, K. J. et al. | SPIE | 2002

Low Threshold 1.3 m InAsP/InP Strained Layer Quantum Well Laser Diodes Grown by Metalorganic Chemical Vapor Deposition

Kasukawa, A. / Imajo, Y. / Namegaya, T. et al. | British Library Conference Proceedings | 1992