Characteristics of InGaAs/GaAs/GaInP Quantum Well Lasers Grown by Gas-Source Molecular-Beam Epitaxy

Zhang, G. / Ovtchinnikov, A. / Naeppi, J. et al. | British Library Conference Proceedings | 1992

The characteristics of 3-stacked InGaAs/GaAs quantum dot lasers grown by atomic layer molecular beam epitaxy

Heo, D. / Song, J.D. / Choi, W.J. et al. | IEEE | 2003

Piezoelectric InGaAs/GaAs/AlGaAs quantum well lasers grown on (111)A GaAs by metalorganic vapor phase epitaxy

Jongseok Kim, / Soohaeng Cho, / Majerfeld, A. et al. | IEEE | 2003

The characteristic of 3-stacked InGaAs/GaAs QD (quantum dot) lasers grown by atomic layer molecular beam epitaxy

Heo, D. / Song, J. D. / Choi, W. J. et al. | British Library Conference Proceedings | 2003

Long-wavelength ridge-waveguide InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy

Wang, J.S. / Kovsh, A.R. / Hsiao, R.S. et al. | IEEE | 2003