Transient photo-induced absorption in InGaN thin films

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Transient photo-induced absorption in InGaN thin films

Nomura, M.-S. / Arita, M. / Ashihara, S. / Kako, S. / Arakawa, Y. / Shimura, T. / Kuroda, K.

Structure dependent absorption spectrum changes In/sub 0.10/Ga/sub 0.90/ thin films of different thickness (5.5, 17, 34, and 66 nm) are investigated by nondegenerate femtosecond pump and probe spectroscopy at room temperature. These spectrum changes are caused by excitonic absorption quenching and screening of internal piezoelectric fields by photo-induced carriers. Both fast (500 ps) and slow (100 /spl mu/s) temporal behaviors are observed in differential absorption spectra. Localized carriers in indium-rich regions and/or carriers captured in midgap traps are considered to keep screening the internal filed and to maintain absorption spectrum changes much longer than the photoluminescence lifetimes.

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Dokumentinformationen

Titel :

Transient photo-induced absorption in InGaN thin films

Beteiligte:

Nomura, M.-S. (Autor:in) / Arita, M. (Autor:in) / Ashihara, S. (Autor:in) / Kako, S. (Autor:in) / Arakawa, Y. (Autor:in) / Shimura, T. (Autor:in) / Kuroda, K. (Autor:in)

Erschienen in:

The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003. ; 1 ; 256-257 vol.1

Erscheinungsdatum :

2003-01-01

Format / Umfang :

129620 byte

ISBN :

0-7803-7888-1

ISSN :

1092-8081

DOI :

https://doi.org/10.1109/LEOS.2003.1251734