Transport properties of freestanding InAs quantum dots on GaAs(001) are investigated by means of conductive atomic force microscopy. Resonant tunneling through the hole state of valence-band of single quantum dot is observed at room temperature. The threshold bias for resonant tunneling is related with the dot size, while the amplitude of tunneling current changes little when the height of dot varies from 2 to 10 nm.


    Zugriff

    Zugriff prüfen

    Verfügbarkeit in meiner Bibliothek prüfen

    Bestellung bei Subito €


    Exportieren, teilen und zitieren



    Titel :

    Resonant tunneling through single InAs quantum dot at room temperature


    Beteiligte:
    Lu, Wei (Autor:in) / Li, Tianxin (Autor:in) / Xiong, Dayuan (Autor:in) / Chen, Pingping (Autor:in) / Xia, Changsheng (Autor:in) / Liu, Zhaolin (Autor:in) / Chen, Xiaoshuang (Autor:in)


    Erscheinungsdatum :

    2006-09-01


    Format / Umfang :

    1191488 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



    Room temperature operation of resonant tunneling quantum dot infrared detectors

    Chakrabarti, S. / Su, X.H. / Ariyawansa, G. et al. | IEEE | 2005


    Room Temperature Operation of Resonant Tunneling Quantum Dot Infrared Detectors

    Chakrabarti, S. | British Library Conference Proceedings | 2005


    Room temperature lasing in InAs quantum-dot microdisk laser

    Ide, T. / Baba, T. / Tatebayashi, J. et al. | IEEE | 2004