Continuous-wave operation of 1.27-/spl mu/m GaAsSb/GaAs VCSELs

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Continuous-wave operation of 1.27-/spl mu/m GaAsSb/GaAs VCSELs

Anan, T. / Yamada, M. / Nishi, K. / Kurihara, K. / Tokutome, K. / Kamei, A. / Sugou, S.

1.27-/spl mu/m VCSELs using GaAsSb quantum wells, which operate continuous-wave at and above room temperature (RT), are reported. A threshold current as low as 0.7 mA at RT and a maximum cw operating temperature of 70/spl deg/C are demonstrated. This result was achieved by optimizing the active-layer structure with respect to strain. Thus, GaAsSb VCSELs are viable low-cost light sources for high-bandwidth fiber communications.

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Dokumentinformationen

Titel :

Continuous-wave operation of 1.27-/spl mu/m GaAsSb/GaAs VCSELs

Beteiligte:

Anan, T. (Autor:in) / Yamada, M. (Autor:in) / Nishi, K. (Autor:in) / Kurihara, K. (Autor:in) / Tokutome, K. (Autor:in) / Kamei, A. (Autor:in) / Sugou, S. (Autor:in)

Erschienen in:

Technical Digest. CLEO/Pacific Rim 2001. 4th Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.01TH8557) ; 2 ; II

Erscheinungsdatum :

2001-01-01

Format / Umfang :

132876 byte

ISBN :

0-7803-6738-3

DOI :

https://doi.org/10.1109/CLEOPR.2001.971102

Medientyp :

Aufsatz (Konferenz)