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    Si and SiC power MOSFET characterization and comparison

    Si and SiC power MOSFET characterization and comparison


    This paper characterizes and compares Si and SiC power MOSFETs in high temperature conditions. The superior advantages of SiC power device, including conductivity, breakdown voltage, high switching speed and high temperature operating potentials, are discussed based on the semiconductor physics properties, including bandgap energy, critical electric field, saturation velocity and thermal conductivity. In characterization of the power devices, the device threshold voltage, on-resistance and leakage current are measured and compared at different temperature levels. The operating characteristics variations are investigated to reveal the high temperature effects on the devices. A DC-DC boost converter with high temperature capability is built and tested in a thermal chamber at 150 °C. The testing results are used to demonstrate the potentials of SiC based power converter in high temperature conditions.

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    Titel :

    Si and SiC power MOSFET characterization and comparison

    Beteiligte:
    Feng Qi, (Autor:in) / Lixing Fu, (Autor:in) / Longya Xu, (Autor:in) / Ping Jing, (Autor:in) / Guoliang Zhao, (Autor:in) / Jiangbo Wang, (Autor:in)
    Erschienen in:

    2014 IEEE Conference and Expo Transportation Electrification Asia-Pacific (ITEC Asia-Pacific) ; 1-6

    Erscheinungsdatum :

    2014-08-01

    Format / Umfang :

    1250082 byte

    ISBN :

    978-1-4799-4240-4 , 978-1-4799-4239-8

    DOI :

    https://doi.org/10.1109/ITEC-AP.2014.6941032

    Medientyp :

    Aufsatz (Konferenz)

    Format :

    Elektronische Ressource

    Sprache :

    Englisch

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