Summary form only given. We report here GaAs-based low, power phototransceivers and phototransceiver arrays with vertically integrated resonant cavity LEDs (RCLEDs) and heterojunction phototransistors (HPTs). A novel integration scheme, based on a tunnel junction (TJ) ensures the simple processing, compact size and excellent performance of the arrays.


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    Titel :

    Phototransceiver arrays with phototransistors and resonant cavity light emitting diodes vertically integrated with tunnel junctions


    Beteiligte:
    Zhou, W.D. (Autor:in) / Pradhan, S. (Autor:in) / Bhattacharya, P. (Autor:in) / Liu, W.K. (Autor:in) / Lubyshev, D. (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    179184 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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