High-power multi-beam AlGaAs TQW lasers with buried-ridge, stripe structure fabricated by using novel etching stop technique

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High-power multi-beam AlGaAs TQW lasers with buried-ridge, stripe structure fabricated by using novel etching stop technique

Shima, A. / Kadowaki, T. / Tada, H. / Miura, T. / Shiba, T. / Miyashita, M. / Omura, E. / Aiga, M. / Ikeda, K.

Light ournut Dower over 1OOmW is obtained even at 60°C from each element of a four-beam laser wrth a mple*quantum well active layer. This laser has a buried-ridge, inner-stripe structure formed by a newly developed etching stop technique, which realizes reproducible fabrication of a multi-beam laser with excellent and uniform characteristics For an individually addressable laser array for parallel data processing.

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Dokumentinformationen

Titel :

High-power multi-beam AlGaAs TQW lasers with buried-ridge, stripe structure fabricated by using novel etching stop technique

Beteiligte:

Shima, A. (Autor:in) / Kadowaki, T. (Autor:in) / Tada, H. (Autor:in) / Miura, T. (Autor:in) / Shiba, T. (Autor:in) / Miyashita, M. (Autor:in) / Omura, E. (Autor:in) / Aiga, M. (Autor:in) / Ikeda, K. (Autor:in)

Erschienen in:

13th IEEE International Semiconductor Laser Conference ; 98-99

Erscheinungsdatum :

1992-01-01

Format / Umfang :

186356 byte

ISBN :

4-930813-51-4

DOI :

https://doi.org/10.1109/ISLC.1992.763590

Medientyp :

Aufsatz (Konferenz)