We discover that SiO/sub 2/ nanoparticles could significantly improve electroluminescence (EL) at Si bandgap energy from metal-oxide-silicon (MOS) structures for orders of magnitudes. Furthermore, the nanoparticle-modified MOS exhibits nearly lasing actions like the threshold behavior and resonance modes.
Nearly lasing actions from metal-oxide-semiconductor structure on Si
2001-01-01
127656 byte
Aufsatz (Konferenz)
Elektronische Ressource
Englisch
ThT3 Nearly Lasing Actions from Nanoparticle-Modified Metal-Oxide-Semiconductor Structure on Si
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