We discover that SiO/sub 2/ nanoparticles could significantly improve electroluminescence (EL) at Si bandgap energy from metal-oxide-silicon (MOS) structures for orders of magnitudes. Furthermore, the nanoparticle-modified MOS exhibits nearly lasing actions like the threshold behavior and resonance modes.


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    Titel :

    Nearly lasing actions from metal-oxide-semiconductor structure on Si


    Beteiligte:
    Ching-Fuh Lin, (Autor:in) / Peng-Fei Chung, (Autor:in) / Miin-Jang Chen, (Autor:in) / Wei-Fang Su, (Autor:in)


    Erscheinungsdatum :

    2001-01-01


    Format / Umfang :

    127656 byte





    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch




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