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    Potential of DCH structure for higher brightness laser diode

    Potential of DCH structure for higher brightness laser diode


    Summary form only given. We have proposed the DCH structure for high power LDs. DCH, which stands for Decoupled Confinement Heterostructure, features a broadened waveguide and carrier blocking layer. The broad waveguide results in low Gamma and an ideal Gaussian shape optical mode. Providing carrier blocking layers makes it possible to freely design the optical guide system independently of the carrier confinement. The brightness that was achieved in the GaAs/AlGaAs LD was about twice as high as the market standard level. In this paper we introduce the potential of the InGaAs/AlGaAs-DCH structure for higher brightness LDs. Our concept is to realize the high brightness LD by using AlGaAs to obtain a high quality crystal and at the same time we adopt the DCH structure to reduce the resistance. This concept performs most effectively on InGaAs/AlGaAs LD from the perspective of material characteristics.

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    Titel :

    Potential of DCH structure for higher brightness laser diode

    Beteiligte:
    Yamada, Y. (Autor:in) / Fujimoto, T. (Autor:in) / Okubo, A. (Autor:in) / Oeda, Y. (Autor:in) / Muro, K. (Autor:in)
    Erschienen in:

    Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013) ; 45

    Erscheinungsdatum :

    1999-01-01

    Format / Umfang :

    162611 byte

    ISBN :

    1-55752-595-1

    DOI :

    https://doi.org/10.1109/CLEO.1999.833854

    Medientyp :

    Aufsatz (Konferenz)

    Format :

    Elektronische Ressource

    Sprache :

    Englisch

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