Switching element manufacture method of power module and Electric device having the same
Switching element manufacture method of power module and Electric device having the same
- Neue Suche nach: CHUN DAE HWAN
- Neue Suche nach: CHUN DAE HWAN
A method for manufacturing a switching device according to the present invention includes forming an epitaxial layer of a first conductivity type on a substrate; forming a base layer by implanting ions of a second conductivity type into the epitaxial layer; forming a conductive region by implanting ions of the first conductivity type into the base layer; forming a trench in the conductive region, the base layer, and the epitaxial layer, forming a current diffusion region by implanting ions of the first conductivity type into the side and lower surfaces of the trench, forming a shield region by implanting ions of the second conductivity type into the lower surface of the trench; forming an insulating portion and a gate electrode in the trench, forming a drain electrode on the substrate; and forming a source electrode at a position adjacent to the conductive region. It is possible to manufacture a switching device having an N-type current spreading region with a higher doping concentration than an epitaxial layer.
본 발명의 스위칭 소자의 제조 방법은, 기판에 제1도전형의 에피택셜층을 형성하고, 에피택셜층에 제2도전형의 이온을 주입하여 베이스층을 형성하고, 베이스층에 제1도전형의 이온을 주입하여 도전 영역을 형성시키고, 도전 영역, 베이스 층 및 에피택셜층에 트렌치를 형성시키고, 트렌치의 측면과 하부면에 제 1 도전형의 이온을 주입하여 전류 확산 영역을 형성시키고, 트렌치의 하부면에 제 2도전형의 이온을 주입하여 쉴드 영역을 형성시키고, 트렌치의 내부에 절연부와 게이트 전극을 형성시키고, 기판에 드레인 전극을 형성시키고, 도전 영역과 인접한 위치에 소스 전극을 형성시킨다.
Dokumentinformationen
Switching element manufacture method of power module and Electric device having the same
스위칭 소자, 그의 제조 방법 및 그를 가지는 전기기기
2021-06-23
Patent
Elektronische Ressource
Koreanisch
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